April, 2008, REV1.2
BCT4157/4157B
Low-Voltage, 2.8Ω SPDT Analog Switch
General Description
The BCT4157/4157B is a high-bandwidth, fast
single-pole double-throw (SPDT) CMOS switch. It
can be used as an analog switch or as a low-delay
bus switch. Specified over a wide operating power
supply voltage range, 1.65V to 5.5V, the
BCT4157/4157B has a maximum ON resistance
of 5.1-ohms at 1.65V, 3.9-ohms at 2.3V &
2.85-ohms at 4.5V.
Break-before-make switching prevents both
switches being enabled simultaneously. This
eliminates signal disruption during switching.
The control input, S, tolerates input drive signals
up to 5.5V, independent of supply voltage.
BCT4157/4157B
is
an
improved
direct
replacement for the FSA4157/NC7SB4157
Features
♦CMOS Technology for Bus and Analog
Applications
♦ Low ON Resistance: 3-ohms @ 2.7V
♦ Wide VCC Range: 1.65V to 5.5V
♦ Rail-to-Rail Signal Range
♦ Control Input Overvoltage Tolerance: 5.5V min.
♦ High Off Isolation: 57dB at 10MHz
♦ 54dB (10MHz) Crosstalk Rejection Reduces
Signal Distortion
♦ Break-Before-Make Switching
♦ High Bandwidth: 300 MHz
♦ Extended Industrial Temperature Range: –40°
C
to 85°
C
♦ Improved Direct Replacement for NC7SB4157
♦ Packaging (Pb-free & Green available):
Pin Description
Applications
Cell Phones
PDAs
Portable Instrumentation
Battery Powered Communications
Computer Peripherals
Name
S
Vcc
A
B0
GND
B1
Description
Logic Control
Positive Power Supply
Common Output/Data Port
Data Port (Normally Closed)
Ground
Data Port
Connection Diagram(Top View)
SC70-6
Logic Function Table
Logic Input (S)
Function
B0 Connected to A
B1 Connected to A
TDFN-6
S
VCC
A
1
2
3
6
5
4
B1
GND
B0
0
1
ORDERING INFORMATION
Ordering Code
BCT4157EXT-TR
BCT4157BEXT-TR
Package Description
6-pin SC70
6-pin TDFN 1.45X1
Temp Range
–40°
to +85°
C
C
–40°
to +85°
C
C
Top Marking
ABG
ABG
www.broadchip.com
April, 2008, REV1.2
Low-Voltage, 2.8Ω SPDT Analog Switch
ABSOLUTE MAXIMUM RATINGS
(1)
RECOMMENDED OPERATING CONDITIONS
(3)
Supply Voltage VCC.........................................–0.5V to +7V
DC Switch Voltage (VS)
(2).
…….......…..–0.5V to VCC +0.5V
DC Input Voltage (VIN) .…..…….....….......–0.5V to +7.0V
DC VCC or Ground Current (ICC/IGND)..................±100mA
DC Output Current (VOUT) .......................................128mA
Storage Temperature Range (TSTG) ....... –65° to +150°
C
C
Junction Temperature under Bias (TJ) .......…............ 150°
C
Junction Lead Temperature (TL)
(Soldering, 10 seconds) .................................... 260°
C
Power Dissipation (PD) @ +85° .............................180mW
C
(2)
Supply Voltage Operating (VCC)………………1.65V to 5.5V
Control Input Voltage (VIN)………………………..0V to VCC
Switch Input Voltage (VIN)…………………………0V to VCC
Output Voltage (VOUT)…………………………….0V to VCC
Operating Temperature (TA)………………...–40° to +85°
C
C
Thermal Resistance (θJA)…………………………..350°
C/W
Note 1:Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions beyond those indicated in the operational sections of
this specification is not implied.
Note 2:The input and output negative voltage ratings may be exceeded if the input and output diode current ratings
are observed.
Note 3:Control input must be held HIGH or LOW; it must not float.
DC ELECTRICAL CHARACTERISTICS
(TA = - 40°C to +85°C)
Parameter
V
IAR
R
ON
Description
Analog Input
Signal Range
ON
Resistance
(4)
ON
Resistance
(4)
ON Resistance
Match
Between
Channels
(4,5,6)
ON
Resistance
(4,5,
7)
Test Conditions
Supply
Voltage
V
CC
Temp (º
C)
T
A
= 25° &
C
–40° to 85°
C
C
T
A
= 25°
C
Min.
0
Typ
Max.
V
CC
Unit
s
V
Ω
I
out
= 100mA,
B
0
or B
1
=1.5V
I
out
= 100mA,
B
0
or B
1
=3.5V
I
out
= 100mA,
B
0
=B
1
=1.5V
I(A) = -100mA; B0
or B1= 0V, 1.5V,
1.5V
I(A) = -100mA; B0
or B1= 0V, 1.5V,
3.0V,
2.7V
3
4.5
R
ON
4.5V
T
A
= 25°
C
3
∆R
ON
2.7V
T
A
= 25°
C
0.75
Ω
R
ONF
2.7V
T
A
= 25°
C
1.5
Ω
Flatness
ON
Resistance
(4,5,
7)
R
ONF
4.5V
T
A
= 25°
C
0.5
Ω
Flatness
V
IH
Input High
Voltage
Logic High Level
V
IL
Input Low
Voltage
Logic Low Level
V
CC
=
1.65V to
1.95V
V
CC
=
2.3V to
5.5V
V
CC
=
1.65V to
1.95V
V
CC
=
2.3V to
5.5V
1.5
T
A
= 25° &
C
–40° to 85°
C
C
1.7
V
0.5
V
0.8
www.broadchip.com
April, 2008, REV1.2
Low-Voltage, 2.8Ω SPDT Analog Switch
DC ELECTRICAL CHARACTERISTICS
(TA = - 40°C to +85°C)
I
IN
Input
Leakage
Current
OFF State
Leakage
Current
Quiescent
Supply Current
0 ≤V
IN
≤5.5V
V
CC
= 0V
to 5.5V
T
A
= 25°
C
T
A
= –40° to
C
85°
C
T
A
= 25°
C
T
A
= 25°
C
T
A
= –40° to
C
85°
C
-2.0
±0.1
±1.0
2.0
1
10
µA
I
OFF
A=1V,4.5V,
B0 or B1=4.5V, 1V
All channels ON or
OFF, V
IN
= V
CC
or
GND,
I
OUT
= 0
V
CC
=
5.5V
I
CC
V
CC
=
5.5V
Note 4: Measured by voltage drop between A and B pins at the indicated current through the device. ON resistance is
determined by the lower of the voltages on two ports (A or B)
Note 5: Parameter is characterized but not tested in production.
Note 6: DR
ON
= R
ON
max – R
ON
min. measured at identical V
CC
, temperature and voltage levels.
Note 7: Flatness is defined as difference between maximum and minimum value of ON resistance over the specified
range of conditions..
Note 8: Guaranteed by design.
CAPACITANCE
Parameter
C
IN
C
IO-B
C
IOA-ON
(12)
Description
Control Input
For B Port,Switch OFF
Test
Conditions
Supply
Voltage
Temp (º
C)
Min.
Typ
2.3
Max.
Units
V
CC
= 5.0V
f= 1
MHz
(12)
T
A
= 25°
C
6.5
18.5
pF
For A Port, Switch ON
SWITCH AND AC CHARACTERISTICS
Parameter
Description
Test Conditions
Supply Voltage
V
CC
= 2.3V to 2.7V
t
PLH
t
PHL
Propagation
Delay: A to
Bn
See test circuit
diagrams 1 and 2. V
I
Open
(10)
V
CC
= 3.0V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 1.65V to
1.95V
t
PZL
t
PZH
Output
Enable Turn
ON Time:
A to Bn
diagrams 1 & 2. See
test circuit
V
I
= 2V
CC
for T
PZL
,
V
I
= 0V for t
PZH
V
CC
= 2.3V to 2.7V
V
CC
= 3.0V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V
t
PZL
t
PZH
OUTPUT
ENABLE
TURN
NOTIME:
A TO BN
See test circuit
diagrams 1 and 2.
V
I
= 2V
CC
for T
PZL
,
V
I
= 0V for t
PZH
V
CC
= 3.3V
V
CC
= 3.0V to 3.6V
V
CC
= 4.5V to 5.5V
T
A
= 25° &
C
–40 to 85°
C
T
A
= 25°
C
7
3.5
2.5
1.7
T
A
= 25° &
C
–40 to 85°
C
Temp (º
C)
Min.
Typ
1.2
0.8
0.3
23
13
6.9
5.2
24
14
7.6
5.7
ns
Max.
Units
www.broadchip.com
April, 2008, REV1.2
Low-Voltage, 2.8Ω SPDT Analog Switch
Output
Disable
Turn
OFF Time:
A to Bn
V
CC
= 1.65V to
1.95V
See test circuit
diagrams 1 and 2.
V
I
= 2V
CC
for T
PZL
,
V
I
= 0V for t
PZH
V
CC
= 2.3V to 2.7V
V
CC
= 3.0V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V
t
PLZ
t
PHZ
Output
Disable
Turn
OFF Time:
A to Bn
See test circuit
diagrams 1 and 2.
V
I
= 2V
CC
for T
PZL
,
V
I
= 0V for t
PZH
V
CC
= 3.3V
V
CC
= 3.0V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V
t
BM
Break
Before
Make Time
See test circuit
diagram 9.
(9)
V
CC
= 3.3V
V
CC
= 3.0V to 3.6V
VCC = 4.5V to 5.5V
Q
Charge
Injection
C
L
= 0.1nF, V
GEN
=
0V, R
GEN
= 0Ω. See
test circuit 4.
R
L
= 50Ω, V
GEN
= 0V,
R
GEN
= 0Ω. See test
circuit 5.
(11)
See test circuit 6.
V
CC
= 5.0V
T
A
= 25°
C
VCC = 3.3V
3
T
A
= 25° &
C
–40 to 85°
C
0.5
0.5
0.5
0.5
7
pC
T
A
= –40 to
85°
C
T
A
= 25°
C
3
2
1.5
0.8
12.5
7
5
3.5
13
7.5
5.3
3.8
t
PLZ
t
PHZ
OIRR
Off Isolation
V
CC
= 1.65V to 5.5V
T
A
= 25°
C
–57
dB
X
TALK
Crosstalk
Isolation
–3dB
Bandwidth
V
CC
= 1.65V to 5.5V
T
A
= 25°
C
–54
f
3dB
See test circuit 9
V
CC
= 1.65V to 5.5V
T
A
= 25°
C
300
MHz
Note 6: Guaranteed by design
Note 7: Guaranteed by design but not production tested. The device contributes no other propagation delay other than
the RC delay of the switch ON resistance and the 50pF load capacitance, whne driven by an ideal voltage
source with zero output impedance.
Note 8: Off Isolation = 20 Log10 [ V
A
/ V
Bn
] and is measured in dB.
Note 9: TA = 25° f = 1MHz. Capacitance is characterized but not tested in production.
C,
www.broadchip.com
April, 2008, REV1.2
Low-Voltage, 2.8Ω SPDT Analog Switch
TEST CIRCUITS AND TIMING DIAGRAMS
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