2SD1664
Rev.D Nov.-2015
描述
特征
/ Features
/
Descriptions
DATA SHEET
SOT-89 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a SOT-89 Plastic Package.
饱和压降½,与 2SB1132 互补。
Low saturation voltage, complements the 2SB1132.
用途
/
Applications
用于中功率放大。
Medium power amplifier applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1：Base
印章代码
PIN 2：Collector
PIN 3：Emitter
/ Marking
P
82½180
HDAP
**
Q
120½270
HDAQ
**
R
180½390
HDAR
**
h
FE
Classifications
Symbol
h
FE
Range
Marking
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2SD1664
Rev.D Nov.-2015
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
(Tc=25℃)
T
j
T
stg
数值
Rating
40
32
5.0
1.0
2.0
500
2.0
150
-55½150
单½
Unit
V
V
V
A
A
mW
W
℃
℃
DATA SHEET
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Collector Base-Continuous(Pulse)
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
40
32
5.0
0.5
0.5
82
0.15
150
15
390
0.4
V
MHz
pF
V
V
V
μA
μA
参数
符号
测试条件
Parameter
Symbol
Test Conditions
Collector to Base Breakdown
V
CBO
I
C
=50μA
I
E
=0
Voltage
Collector to Emitter Breakdown
I
B
=0
V
CEO
I
C
=1.0mA
Voltage
Emitter to Base Breakdown Voltage V
EBO
I
E
=50μA
I
C
=0
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
V
CB
=20V
V
EB
=4.0V
V
CE
=3.0V
I
C
=500mA
V
CE
=5.0V
f=100MHz
V
CB
=10V
f=1.0MHz
I
E
=0
I
C
=0
I
C
=100mA
I
B
=50mA
I
C
=50mA
I
E
=0
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