2N4401
Rev.F Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-92 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-92 Plastic Package.
特征
/ Features
高电流，½电压。
High current, Low voltage.
用途
/
Applications
用于 I
C
电流达 500mA 的中功率放大及开关电路。
Medium power amplifier and switch requiring collector currents up to 500 mA.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1：Collector
放大及印章代码
PIN 2：Base
PIN 3：Emitter
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
http://www.fsbrec.com
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2N4401
Rev.F Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
60
40
6.0
600
625
150
-55½150
单½
Unit
V
V
V
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
测试条件
Test Conditions
I
C
=0.1mA
I
C
=1.0mA
I
E
=0.1mA
V
CB
=60V
V
EB
=6.0V
V
CE
=1.0V
V
CE
=2.0V
V
CE
=1.0V
V
CE
=1.0V
V
CE
=1.0V
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
=150mA
I
C
=500mA
I
C
=10mA
I
C
=1.0mA
I
C
=0.1mA
I
B
=15mA
I
B
=50mA
I
B
=15mA
I
B
=50mA
I
C
=20mA
I
C
=150mA
250
15
20
225
30
0.75
100
40
80
40
20
0.4
0.75
0.95
1.2
V
V
V
V
MHz
ns
ns
ns
ns
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
60
40
6.0
50
50
300
V
V
V
nA
nA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Current Gain Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(sat) (1)
I
C
=150mA
V
CE(sat) (2)
I
C
=500mA
V
BE(sat) (1)
I
C
=150mA
V
BE(sat) (2)
I
C
=500mA
f
T
t
d
t
r
t
s
t
f
V
CE
=10V
f=100MHz
V
CC
=30V
I
B1
=15mA
V
CC
=30V
I
C
=150mA
I
B1
=-I
B2
=15mA
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