2N5401
Rev.F Mar-2016
DATA SHEET
描述
/
Descriptions
TO-92 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a TO-92 Plastic Package.
特征
/ Features
击穿电压高,可与 2N5551 互补。
High voltages, complementary pair with 2N5551.
用途
/
Applications
用于普通高压放大。
General purpose high voltage amplifier.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1：Collector
放大及印章代码
PIN 2：Base
PIN 3：Emitter
/ h
FE
Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
A
50~150
B
100~300
C
200~400
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2N5401
Rev.F Mar-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
数值
Rating
-180
-160
-6.0
-600
-300
625
150
-55½150
单½
Unit
V
V
V
mA
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
测试条件
Test Conditions
V
CB
=-180V
V
EB
=-6.0V
V
CE
=-5.0V
V
CE
=-5.0V
V
CE
=-5.0V
I
E
=0
I
C
=0
I
C
=-10mA
I
C
=-50mA
I
C
=-1.0mA
I
B
=-1.0mA
I
B
=-5.0mA
I
B
=-1.0mA
I
B
=-5.0mA
I
C
=-10mA
I
C
=-10mA
50
50
20
40
-0.12
-0.5
-0.75
-0.8
-0.7
80
2.5
0.1
0.2
0.1
5.0
-0.4
-0.8
-1.0
-1.0
-0.75
V
V
V
V
V
MHz
pF
μs
μs
μs
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-0.1
-0.1
400
μA
μA
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
Storage Time
V
CE(sat) (1)
I
C
=-10mA
V
CE(sat) (2)
I
C
=-50mA
V
BE(sat) (1)
I
C
=-10mA
V
BE(sat) (2)
I
C
=-50mA
V
BE
f
T
C
ob
t
on
t
off
t
stg
V
CE
=-5.0V
V
CE
=-10V
V
CB
=-10V
I
E
=0
f=10MHz
I
C
=-100mA
–I
B1
=I
B2
=-10mA
I
C
=-100mA
–I
B1
=I
B2
=-10mA
I
C
=-100mA
–I
B1
=I
B2
=-10mA
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