8550T
Rev.E Mar.-2016
描述
特征
/ Features
/
Descriptions
DATA SHEET
SOT-89 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a SOT-89 Plastic Package.
与 8050T 互补。
Complementary pair with 8050T.
用途
/
Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1：Base
印章代码
PIN 2：Collector
PIN 3：Emitter
/ Marking
B
85½160
HY2B
**
C
120½200
HY2C
**
D
160½300
HY2D
**
h
FE
Classifications
Symbol
h
FE
Range
Marking
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8550T
Rev.E Mar.-2016
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
数值
Rating
-40
-25
-6.0
-1.5
-0.5
625
150
-55½150
单½
Unit
V
V
V
A
A
mW
℃
℃
DATA SHEET
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Base - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-40
-25
-6.0
-0.1
-0.1
85
40
45
-0.28
-0.98
-0.66
100
200
15
-0.5
-1.2
-1.0
V
V
V
MHz
pF
300
V
V
V
μA
μA
参数
符号
测试条件
Parameter
Symbol
Test Conditions
Collector to Base Breakdown
V
CBO
I
C
=-0.1mA I
E
=0
Voltage
Collector to Emitter Breakdown
V
CEO
I
C
=-2.0mA I
B
=0
Voltage
Emitter to Base Breakdown Voltage V
EBO
I
E
=-0.1mA
I
C
=0
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Emitter to Base Saturation Voltage
Emitter to Base Voltage
Transition Frequency
Collector Output Capacitance
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
V
CB
=-35V
V
EB
=-6.0V
V
CE
=-1.0V
V
CE
=-1.0V
V
CE
=-1.0V
I
C
=-800mA
I
C
=-800mA
V
CE
=-1.0V
V
CE
=-10V
V
CB
=-10V
f=1.0MHz
I
E
=0
I
C
=0
I
C
=-100mA
I
C
=-800mA
I
C
=-5.0mA
I
B
=-80mA
I
B
=-80mA
I
C
=-10mA
I
C
=-50mA
I
E
=0
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