2SD669(A)
Rev.F Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-126F 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-126F Plastic Package.
特征
/ Features
与 2SB649(A)互补。
Complementary pair with 2SB649(A).
用途
/
Applications
用于½频功率放大。
Low frequency power amplifier.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1:Emitter
放大及印章代码
PIN 2:Collector
PIN 3:Base
/ h
FE
Classifications & Marking
B
60½120
C
100½200
D
160½320
h
FE
Classifications
Symbol
h
FE
Range
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2SD669(A)
Rev.F Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
2SD669
2SD669A
数值
Rating
180
120
160
5.0
1.5
3.0
1.0
20
150
-55½150
单½
Unit
V
V
V
A
A
W
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current(Pulse)
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
EBO
I
C
I
CP
P
C
P
C
(Tc=25℃)
T
j
T
stg
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
2SD669
2SD669A
参数
Parameter
Collector to Base
Breakdown Voltage
Collector to Emitter
Breakdown Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
DC Current Gain
Base to Emitter Voltage
Collector to Emitter
Saturation Voltage
Transition Frequency
Collector output capacitance
测试条件
Test Conditions
I
C
=1.0mA
I
C
=10mA
I
E
=1.0mA
V
CB
=160V
V
CE
=5.0V
V
CE
=5.0V
V
CE
=5.0V
I
C
=500mA
V
CE
=5.0V
V
CB
=10V
f=1.0MHz
I
E
=0
R
BE
=∞
I
C
=0
I
E
=0
I
C
=150mA
I
C
=500mA
I
C
=150mA
I
B
=50mA
I
C
=150mA
I
E
=0
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
180
120
160
5.0
10
60
30
1.5
1.0
140
14
V
V
MHz
pF
320
V
V
V
μA
V
EBO
I
CBO
h
FE(1)
h
FE(2)
V
BE
V
CE(sat)
f
T
C
ob
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