BRCS3420MC
Rev.A Dec.-2016
描述
/
Descriptions
DATA SHEET
SOT23-3
塑封封装
N
道
MOS
场效应管。N-
CHANNEL MOSFET in a SOT23-3 Plastic Package.
特征
/ Features
V
DS
(V) = 20V
I
D
= 6 A (V
GS
= 10V)
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 4.5V)
用途
/
Applications
适用于½负½½开关或脉½调制应用。
This device is suitable for use as a load switch or in PWM applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
3
1
2
PIN1：G
印章代码
Marking
PIN 2：S
/ Marking
ALH
PIN 3：D
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6
BRCS3420MC
Rev.A Dec.-2016
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
DS
I
D
I
D
(T
a
=70℃)
I
DM
V
GS
P
D
P
D
(T
a
=70℃)
T
J
, T
STG
数值
Rating
20
6
5
25
±12
1.4
0.9
-55 to 150
单½
Unit
V
A
A
A
V
W
W
℃
DATA SHEET
参数
Parameter
Drain-Source Voltage
Drain Current – Continuous
Drain Current- Continuous
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation
Total Power Dissipation
Operating and Storage Junction Temperature
Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
BV
DSS
I
DSS
I
GSS
I
D(on)
V
GS(th)
R
DS(on)1
R
DS(on)2
R
DS(on)3
g
FS
V
SD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=5V
V
DS
=10V
R
L
=1.7Ω
R
GEN
=6Ω
测试条件
Test Conditions
I
D
=250
μ
A
V
GS
=0V
V
GS
=0V
V
DS
=16V
V
DS
=16V
V
GS
=0V
T
J
=55℃
V
GS
=±12V
V
DS
=0V
V
GS
=4.5V
V
DS
=V
GS
V
GS
=10V
V
GS
=10V
T
J
=125℃
V
GS
=4.5V
V
DS
=5V
V
GS
=0V
V
DS
=10V
f=1MHz
V
DS
=5V
I
D
=250
μ
A
I
D
=6A
I
D
=6A
I
D
=5A
I
D
=3.8A
I
S
=1A
V
GS
=0V
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
20
V
1.0
5.0
±0.1
25
0.5
0.7
18
29
20
24
0.75
630
164
137
5.5
14
29
10.2
ns
pF
1
1
24
35
27
S
V
mΩ
μA
μA
μA
A
V
参数
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage.
On–State Drain Current
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Forward Transconductance
Drain–Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
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