KTC4375
Rev.E Mar.-2016
描述
/
Descriptions
DATA SHEET
SOT-89 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a SOT-89 Plastic Package.
特征
/ Features
小型封装,与 KTA1663 互补。
Small flat package, complementary to KTA1663.
用途
/
Applications
用于大电流放大。
High current application.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1:Base
印章代码
PIN 2:Collector
PIN 3:Emitter
/ Marking
O
100½200
HGO
**
Y
160½320
HGY
**
h
FE
Classifications
Symbol
h
FE
Range
Marking
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KTC4375
Rev.E Mar.-2016
极限参数
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*P
C
T
j
T
stg
数值
Rating
30
30
5.0
1.5
0.3
500
1.0
150
-55½150
单½
Unit
V
V
V
A
A
mW
W
℃
℃
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Base – Continuous
Collector Power Dissipation
Collector Power Dissipation*
Junction Temperature
Storage Temperature Range
*:mounted on ceramic substrate(250mm
2
×0.8t).
*装于 250mm
2
×0.8t 的陶瓷上。
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
参数
Parameter
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
测试条件
Test Conditions
I
C
=10mA
I
E
=1.0mA
V
CB
=30V
V
EB
=5.0V
V
CE
=2.0V
I
C
=1.5A
V
CE
=2.0V
V
CE
=2.0V
V
CB
=10V
f=1.0MHz
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
=500mA
I
B
=0.03A
I
C
=500mA
I
C
=500mA
I
E
=0
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
30
5.0
0.1
0.1
100
320
2.0
1.0
120
40
V
V
MHz
pF
V
V
μA
μA
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