KTD1624
Rev.G Jan.-2019
描述
/
Descriptions
DATA SHEET
SOT-89 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a SOT-89 Plastic Package.
特征
/ Features
选用 MBIT 工艺规程，集电极-发射集饱和压降½,开关速度快，小电流电容和½阔的安全工½区，可与
互补 KTB1124。无卤产品。
Adoption of MBIT processes, low collector-to-emitter saturation voltage, fast Switching Speed, Large
current capacity and wide ASO, Complementary to KTB1124. Halogen-free Product.
用途
/
Applications
用于电压调整器，½播驱动器，灯管驱动器，电力设备。
Voltage regulators ,relay drivers lamp drivers, electrical equipment.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1：Base
印章代码
PIN 2：Collector
PIN 3：Emitter
/ Marking
A
100½200
**
YHA
B
140½280
**
YHB
C
200½400
**
YHC
h
FE
Classifications
Symbol
h
FE
Range
Marking
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KTD1624
Rev.G Jan.-2019
极限参数
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
*P
C
T
j
T
stg
数值
Rating
60
50
6.0
3.0
6.0
500
1.0
150
-55½150
单½
Unit
V
V
V
A
A
mW
W
℃
℃
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous（Pulse）
Collector Power Dissipation
Collector Power Dissipation*
Junction Temperature
Storage Temperature Range
*:Package mounted on ceramic substrate(250mm
2
×0.8t)
电性½参数
/ Electrical Characteristics(Ta=25℃)
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
60
50
6.0
1.0
1.0
100
35
0.19
0.94
150
25
70
101
B1
=-101
B2
=I
C
=1.0A
650
35
0.5
1.2
V
V
MHz
pF
nS
nS
nS
400
V
V
V
μA
μA
参数
符号
测试条件
Parameter
Symbol
Test Conditions
Collector to Base Breakdown
V
CBO
I
C
=10μA
I
E
=0
Voltage
Collector to Emitter Breakdown
I
B
=0
V
CEO
I
C
=1.0mA
Voltage
Emitter to Base Breakdown Voltage V
EBO
I
E
=10μA
I
C
=0
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
C
ob
t
on
t
stg
t
f
V
CB
=40V
V
EB
=4.0V
V
CE
=2.0V
V
CE
=2.0V
I
C
=2.0A
I
C
=2.0A
V
CE
=10V
V
CB
=10V
f=1MHz
I
E
=0
I
C
=0
I
C
=100mA
I
C
=3.0A
I
B
=100mA
I
B
=100mA
I
C
=50mA
I
E
=0
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