2SC1815
Rev.E Nov.-2015
DATA SHEET
描述
特征
/
Descriptions
TO-92 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-92 Plastic Package.
/ Features
耐压高,电流大,有极½的 h
FE
特性,½噪声系数,可与 2SA1015 互补。
High voltage and high current, excellent h
FE
linearity ,low noise ,complementary pair with 2SA1015.
用途
/
Applications
用于音频放大,激励级放大。
Audio frequency general purpose ,driver stage amplifier applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1:Base
放大及印章代码
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
O
70~140
Y
120~240
GR
200~400
BL
350~700
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2SC1815
Rev.E Nov.-2015
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
数值
Rating
60
50
5.0
150
50
400
150
-55½150
单½
Unit
V
V
V
mA
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
rbb′
测试条件
Test Conditions
I
C
=100μA
I
C
=500μA
I
E
=100μA
V
CB
=60V
V
EB
=5.0V
V
CE
=6.0V
V
CE
=6.0V
I
C
=100mA
I
C
=100mA
V
CE
=10V
V
CB
=10V
f=1.0MHz
V
CE
=6.0V
R
g
=10KΩ
V
CB
=10V
f=30MHz
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
=2.0mA
I
C
=150mA
I
B
=10mA
I
B
=10mA
I
C
=1.0mA
I
E
=0
I
C
=0.1mA
f=1.0KHz
I
C
=1.0mA
80
2.0
1.0
50
3.5
10
70
25
100
0.1
0.25
1.0
V
V
MHz
pF
dB
Ω
最小值 典型值 最大值
Min
Typ
Max
60
50
5.0
0.1
0.1
700
单½
Unit
V
V
V
μA
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Base Intrinsic Resistance
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