MJE13003K4
Rev.E May.-2016
DATA SHEET
描述
特征
/
Descriptions
TO-252 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-252 Plastic Package.
/ Features
耐压高,开关速度快。
High voltage capability, high speed switching.
用途
/
Applications
主要用于高频电子照明电路、开关及开关电源。
High frequency electronic lighting, switching power supply applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1：Base
放大及印章代码
PIN 2、4：Collector
PIN 3：Emitter
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions
http://www.fsbrec.com
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6
MJE13003K4
Rev.E May.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
(Tc=25℃)
T
j
T
stg
数值
Rating
600
400
9.0
1.5
1.25
50
150
-55½150
单½
Unit
V
V
V
A
W
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
s
t
f
测试条件
Test Conditions
I
C
=1mA
I
C
=10mA
I
E
=1mA
V
CB
=600V
V
CE
=400V
V
EB
=9.0V
V
CE
=5.0V
I
C
=1.0A
I
C
=1.0A
V
CE
=10V
f=1.0MHz
V
CE
=5V
(UI9600)
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
B
=0
I
C
=0
I
C
=0.2A
I
B
=0.25A
I
B
=0.5A
I
C
=0.1A
I
C
=250mA
5.0
4
0.8
10
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
600
400
9.0
0.1
0.1
0.1
40
0.9
1.2
V
V
MHz
μs
μs
V
V
V
mA
mA
mA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector cut-off current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Base Breakdown
Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Storage time
Fall time
http://www.fsbrec.com
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