BRD4N65
Rev.F Aug.-2017
DATA SHEET
描述
/
Descriptions
TO-252
塑封封装
N
沟道
MOS
场效应管。N-CHANNEL
MOSFET in a TO-252 Plastic Package.
特征
/ Features
½栅电荷,½反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
该器件适用于适配器和充电器的功率开关电路
These devices are well suited for power switch circuit of adaptor and charger.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1：G
放大及印章代码
PIN 2：D
PIN 3：S
PIN 4：D
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
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BRD4N65
Rev.F Aug.-2017
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
DSS
I
D
(Tc=25℃)
I
D
(Tc=100℃)
I
DM
V
GSS
E
AS
E
AR
I
AR
P
D
(Tc=25℃)
T
J
,T
STG
数值
Rating
650
4.0
3.2
16
±30
150
30
2.5
75
-55 to 150
单½
Unit
V
A
A
A
V
mJ
mJ
A
W
℃
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Power Dissipation
Operating and Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
SD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=325V
R
G
=10Ω
I
D
=4.0A
V
DS
=25V
f=1.0MHz
V
GS
=0V
测试条件
Test Conditions
V
GS
=0V
V
DS
=650V
V
DS
=520V
V
GS
=±30V
V
DS
=V
GS
V
GS
=10V
V
DS
=15V
V
GS
=0V
I
D
=250μA
V
GS
=0V
T
C
=125℃
V
DS
=0V
I
D
=250μA
I
D
=2.0A
I
D
=2.0A
I
S
=4.0A
560
50
2.2
14
22
29
15
3.5
1.5
2.0
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
650
1
100
±100
4.0
2.7
V
μA
μA
nA
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
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