MJD112
Rev.E May.-2016
DATA SHEET
描述
特征
/
Descriptions
TO-252 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-252 Plastic Package.
/ Features
直流电流增益高,E 与 C 间内½阻尼二极管电性½与 TIP112 等同。
High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP112.
用途
/
Applications
用于中功率放大或开关电路。
Medium power switching applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1:Base
放大及印章代码
PIN 2,4:Collector
PIN 3:Emitter
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
http://www.fsbrec.com
1
/
6
MJD112
Rev.E May.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(Pulse)
I
B
P
C
P
C
(T
C
=25
℃
)
T
j
T
stg
数值
Rating
100
100
5.0
2.0
4.0
50
1.75
20
150
-55½150
单½
Unit
V
V
V
A
A
mA
W
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Pulse Test:PW≤300μs,Duty Cycle≤2%
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CEO*
I
CEO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)*
h
FE(3)*
V
CE(sat)1*
V
CE(sat)2*
V
BE(sat)*
V
BE(on)*
f
T
C
ob
测试条件
Test Conditions
I
C
=30mA
V
CE
=50V
V
CB
=100V
V
EB
=5.0V
V
CE
=3.0V
V
CE
=3.0V
V
CE
=3.0V
I
C
=2.0A
I
C
=4.0A
I
C
=4.0A
V
CE
=3.0V
V
CE
=10V
V
CB
=10V
f=0.1MHz
I
B
=0
I
B
=0
I
E
=0
I
C
=0
I
C
=2.0A
I
C
=0.5A
I
C
=4.0A
I
B
=8.0mA
I
B
=40mA
I
B
=40mA
I
C
=2.0A
I
C
=0.75A
I
E
=0
25
100
1000
500
200
2.0
3.0
4.0
2.8
V
V
V
V
MHz
pF
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
100
0.02
0.02
2.0
12K
V
mA
mA
mA
参数
Parameter
Collector to Emitter Breakdown
Voltage*
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage*
Base-Emitter-On Voltage*
Current Gain Bandwidth Product
Output Capacitance
*Pulse Test:Pulse Width≤380us,Duty Cycle≤2%.
*脉冲测试:脉½≤380us,占空比≤2%。
http://www.fsbrec.com
2
/
6