MPSA95
Rev.A Mar.-2018
DATA SHEET
描述
/
Descriptions
TO-92 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a TO-92 Plastic Package.
特征
/ Features
耐压高，
High voltage.
用途
/
Applications
用于高电压控制电路。
High voltage control circuit.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1：Collector
放大及印章代码
PIN 2：Emitter
PIN 3：Base
/ hFE Classifications & Marking
见印章说明。See
Marking Instructions.
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MPSA95
Rev.A Mar.-2018
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
-400
-400
-5.0
-300
625
150
-55½150
单½
Unit
V
V
V
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
测试条件
Test Conditions
I
C
=-100μA
I
C
=-1.0mA
I
E
=-100μA
V
CB
=-300V
V
CE
=-400V
V
EB
=-4.0V
V
CE
=-10V
V
CE
=-10V
V
CE
=-10V
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
E
=0
I
C
=0
I
C
=-10mA
I
C
=-1.0mA
I
C
=-100mA
I
B
=-1.0mA
I
B
=-5.0mA
I
B
=-1.0mA
I
C
=-10mA
80
70
60
-0.2
-0.3
-0.75
50
V
MHz
V
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-400
-400
-5.0
-0.1
-5.0
-0.1
250
μA
V
V
V
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
V
CE(sat)(1)
I
C
=-10mA
V
CE(sat)(2)
I
C
=-50mA
I
C
=-10mA
V
CE
=-5.0V
f=30MHz
Base to Emitter Saturation Voltage V
BE(sat)
Transition Frequency
f
T
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