MMBT2907A
Rev.G Aug.-2018
DATA SHEET
描述
/
Descriptions
SOT-23 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a SOT-23 Plastic Package.
特征
/ Features
集电极电流可达 600mA。
Collector currents to 600mA.
用途
/
Applications
用于普通放大。
General purpose amplifier.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
3
1
2
PIN 1：Base
放大及印章代码
h
FE
Range
Marking
PIN 2：Emitter
PIN 3：Collector
/ h
FE
Classifications & Marking
100½300
H2F
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MMBT2907A
Rev.G Aug.-2018
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
-60
-60
-5.0
-600
350
150
-55½150
单½
Unit
V
V
V
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE(1)
h
FE(2)
测试条件
Test Conditions
I
C
=-10μA
I
C
=-10mA
I
E
=-10μA
V
CB
=-50V
V
CE
=-10V
V
CE
=-10V
V
CE
=-10V
V
CE
=-10V
V
CE
=-10V
I
C
=-150mA
I
C
=-500mA
I
C
=-150mA
I
C
=-500mA
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=-150mA*
I
C
=-500mA*
I
C
=-10mA
I
C
=-1.0mA
I
C
=-0.1mA
I
B
=-15 mA
I
B
=-50mA
I
B
=-15 mA
I
B
=-50mA
200
8.0
50
100
100
50
100
100
75
-0.4
-1.6
-1.3
-2.6
V
V
V
V
MHz
pF
ns
ns
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-60
-60
-5.0
-0.01
300
V
V
V
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
DC Current Gain
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat) (1)
V
CE(sat) (2)
V
BE(sat) (1)
V
BE(sat) (2)
f
T
C
ob
t
on
t
off
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Turn–On Time
Turn–Off Time
I
C
=-50mA
V
CE
=-20V
f=100MHz
V
CB
=-10V
I
E
=0
f=1.0MHz
V
CC
=-30V
I
C
=-150mA
I
B1
=-15mA
V
CC
=-30V
I
C
=-150mA
I
B1
=I
B2
=-15mA
*Pulse Test: Pulse Width
≤
300
μs,
Duty Cycle
≤
2.0%
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