BC550
Rev.F Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-92(R)塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-92(R) Plastic Package.
特征
/ Features
高电压，½噪声。
High Voltage, Low Noise.
用途
/
Applications
用于½噪声放大。
Low noise amplifier application.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1：Emitter
放大及印章代码
PIN 2：Base
PIN 3：Collector
/ h
FE
Classifications & Marking
A
110½220
B
200½450
C
420½800
h
FE
Classifications
Symbol
h
FE
Range
http://www.fsbrec.com
1
/
6
BC550
Rev.F Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
50
45
5.0
100
625
150
-55½150
单½
Unit
V
V
V
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
ob
NF
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Transition Frequency
Noise Figure
测试条件
Test Conditions
I
C
=10mA
I
C
=10μA
I
E
=10μA
V
CB
=30V
V
CE
=5.0V
I
C
=100mA
I
C
=100mA
V
CE
=5.0V
V
CE
=5.0V
f=100MHz
V
CB
=10V
f=1.0MHz
V
CE
=5.0V
I
C
=200μA
I
B
=0
I
E
=0
I
C
=0
I
E
=0
I
C
=2.0mA
I
B
=5.0mA
I
B
=5.0mA
I
C
=2.0mA
I
E
=10mA
I
E
=0
R
g
=10KΩ
f=1.0KHz
最小值 典型值
Min
Typ
45
50
5.0
最大值
Max
单½
Unit
V
V
V
0.015
110
800
0.6
0.9
0.55
300
4.5
10
0.7
μA
V
V
V
MHz
pF
dB
http://www.fsbrec.com
2
/
6
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
