LV10T100D
Rev.F Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-252 塑封封装 肖特基二极管。
Schottky Diode in a TO-252 Plastic Package.
特征
/ Features
高正向浪涌½力,超½正向压降,优异的高温稳定性。
High Forward Surge Capability, Ultra Low Forward Voltage Drop, Excellent High Temperature
Stability.
用途
/
Applications
用于高频、½压、大电流整流二极管,续流二极管,保护二极管。
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
2
3
PIN1:Anode
放大及印章代码
PIN 2,4:Cathode
PIN 3:Anode
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
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LV10T100D
Rev.F Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
RM
V
RSM
V
DC
V
RMS
I
F(AV)
I
FSM
R
θJc
T
j
T
stg
数值
Rating
100
70
1×10
200
2.0
-55½+150
单½
Unit
V
V
A
A
℃/W
℃
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average forward rectified current
Non Repetitive Peak Surge Current
Thermal Resistance Junction to Case
Junction and Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
V
(BR)R
测试条件
Test Conditions
I
R
=1mA(Ta=25℃)
I
F
=2A(Ta=25℃)
I
F
=10A(Ta=25℃)
I
F
=2A(Ta=125℃)
I
F
=10A(Ta=125℃)
V
R
=100V(Ta=25℃)
V
R
=100V(Ta=125℃)
最小值 典型值 最大值
Min
Typ
Max
100
0.41
0.58
0.31
0.55
0.45
0.65
0.40
0.65
150
25
单½
Unit
V
V
V
V
V
μA
mA
Reverse Voltage
Forward Voltage
V
F
Instantaneous Reverse Current
注/Notes:
(Note
1)
I
R
1.
½用极短的测试时间,以½量减少自热效应。
Short duration pulse test used to minimize self-heating effect.
2.
除非特别注明,数值为一个芯片的参数。
Unless otherwise noted, values for the parameters of a single chip
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