S8550
Rev.E Mar.-2016
DATA SHEET
描述
特征
/
Descriptions
TO-92 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a TO-92 Plastic Package.
/ Features
P
C
,I
C
大,与 S8050 互补。
High P
C
and I
C
, complementary pair with S8050.
用途
/
Applications
用于乙类推½功放。
Amplifier of portable radios in class B push-pull operation.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1：Collector
放大及印章代码
PIN 2：Base
PIN 3：Emitter
/ h
FE
Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
B
85~160
C
120~200
D
160~300
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S8550
Rev.E Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
数值
Rating
-40
-25
-6.0
-800
-200
625
150
-55½150
单½
Unit
V
V
V
mA
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
测试条件
Test Conditions
I
C
=-0.1mA
I
C
=-2.0mA
I
E
=-0.1mA
V
CB
=-35V
V
EB
=-6.0V
V
CE
=-1.0V
V
CE
=-1.0V
V
CE
=-1.0V
I
C
=-500mA
I
C
=-500mA
V
CE
=-1.0V
V
CE
=-10V
V
CB
=-10V
f=1.0MHz
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
=-100mA
I
C
=-500mA
I
C
=-5.0mA
I
B
=-50mA
I
B
=-50mA
I
C
=-10mA
I
C
=-50mA
I
E
=0
100
85
40
45
-0.28
-0.98
-0.66
200
15
-0.6
-1.2
-1.0
V
V
V
MHz
pF
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-40
-25
-6.0
-0.1
-0.1
300
V
V
V
μA
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
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