MJD42C
Rev.E May.-2016
DATA SHEET
描述
特征
/
Descriptions
TO-252 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a TO-252 Plastic Package.
/ Features
与 MJD41C 互补。
Complement to MJD41C.
用途
/
Applications
用于中功率线性开关。
Medium power linear switching applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1：Base
放大及印章代码
PIN 2,4：Collector
PIN 3：Emitter
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions
.
http://www.fsbrec.com
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MJD42C
Rev.E May.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
(T
C
=25
℃
)
T
j
T
stg
数值
Rating
-100
-100
-5.0
-6.0
-2.0
1.75
20
150
-55½150
单½
Unit
V
V
V
A
A
W
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CEO
I
CEO
I
CES
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(on)
f
T
测试条件
Test Conditions
I
C
=-30mA
V
CE
=-60V
V
CE
=-100V
V
BE
=-5.0V
V
CE
=-4.0V
V
CE
=-4.0V
I
C
=-6.0A
V
CE
=-6.0V
V
CE
=-10V
I
B
=0
I
B
=0
V
BE
=0
I
C
=0
I
C
=-3.0A
I
C
=-0.3A
I
B
=-600mA
I
C
=-4.0A
I
C
=-500mA
3
15
30
-1.5
-2.0
V
V
MHz
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
V
-100
-50
-10
-0.5
75
μA
μA
mA
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter On Voltage
Current- Gain Bandwidth Product
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详细参数
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