KTC3200
Rev.E Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-92 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-92 Plastic Package.
特征
/ Features
½噪声,高 h
FE
,高击穿电压。
Low noise, high h
FE
, high breakdown voltage.
用途
/
Applications
用于½噪声放大。
Low noise audio amplifier application.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1:Base
放大及印章代码
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
Y
120~240
GR
200~400
BL
350~700
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KTC3200
Rev.E Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
120
120
5.0
100
625
150
-55½150
单½
Unit
V
V
V
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
测试条件
Test Conditions
I
C
=1.0mA
I
C
=100μA
I
E
=100μA
V
CB
=120V
V
EB
=5.0V
V
CE
=6.0V
I
C
=10mA
V
CE
=6.0V
V
CE
=6.0V
V
CB
=10V
f=1.0MHz
V
CE
=6.0V
f=10Hz
V
CE
=6.0V
f=1.0KHz
V
CE
=6.0V
f=1.0KHz
I
B
=0
I
E
=0
I
C
=0
I
E
=0
I
C
=0
I
C
=2.0mA
I
B
=1.0mA
I
C
=2.0mA
I
C
=1.0mA
I
E
=0
I
C
=100μA
R
g
=10KΩ
I
C
=100μA
R
g
=10KΩ
I
C
=100μA
R
g
=100Ω
0.65
100
3.0
6.0
2.0
4.0
dB
120
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
120
120
5.0
0.1
0.1
700
0.3
V
V
MHz
pF
V
V
V
μA
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Capacitance
Noise Figure
NF
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