2SD880
Rev.H Oct.-2018
DATA SHEET
描述
/
Descriptions
TO-220 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-220 Plastic Package.
特征
/ Features
直流电流增益高，饱和压降½，集电极耗散功率大,与 2SB834 互补。
High DC current gain, low saturation voltage, high power dissipation, complementary to 2SB834.
用途
/
Applications
用于音频功率放大。
Audio frequency power amplifier applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1：Base
放大及印章代码
PIN 2：Collector
PIN 3：Emitter
/ h
FE
Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
O
60½120
Y
100½200
GR
150½300
http://www.fsbrec.com
1
/
6
2SD880
Rev.H Oct.-2018
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
(T
C
=25
℃
)
T
j
T
stg
数值
Rating
60
60
7.0
3.0
0.5
1.5
30
150
-55½150
单½
Unit
V
V
V
A
A
W
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
t
on
t
stg
t
f
I
B1
=-I
B2
=0.2A
测试条件
Test Conditions
I
C
=50mA
V
CB
=60V
V
EB
=7.0V
V
CE
=5.0V
I
C
=3.0A
V
CE
=5.0V
V
CE
=5.0V
V
CB
=10V
f=1.0MHz
I
B
=0
I
E
=0
I
C
=0
I
C
=0.5A
I
B
=0.3A
I
C
=0.5A
I
C
=0.5A
I
E
=0
60
0.25
0.7
3.0
70
0.8
1.5
0.8
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
60
100
100
300
1.0
1.0
V
V
MHz
pF
μS
μS
μS
V
μA
μA
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Turn-On Time
Turn-On Time
Storage Time
Fall Time
http://www.fsbrec.com
2
/
6
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
