MMBT5551
Rev.F Apr.-2017
DATA SHEET
描述
/
Descriptions
SOT-23 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a SOT-23 Plastic Package.
特征
/ Features
击穿电压高,可与 MMBT5401 互补。
High voltage, complementary pair with MMBT5401.
用途
/
Applications
用于普通高压放大。
General purpose high voltage amplifier.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
3
1
2
PIN1：Base
放大及印章代码
PIN 2： Emitter
PIN 3：Collector
/ h
FE
Classifications & Marking
A
50½150
HG1A
B
100½300
HG1B
C
200½400
HG1C
h
FE
Classifications
Symbol
h
FE
Range
Marking
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MMBT5551
Rev.F Apr.-2017
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
数值
Rating
180
160
6.0
600
300
500
150
-55½150
单½
Unit
V
V
V
mA
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat) (1)
V
CE(sat) (2)
V
BE(sat) (1)
V
BE(sat) (2)
V
BE
f
T
C
ob
t
on
t
off
t
stg
I
C
=100mA
I
B1
=-I
B2
=10mA
测试条件
Test Conditions
V
CB
=180V
I
E
=0
V
EB
=6.0V
V
CE
=5.0V
V
CE
=5.0V
V
CE
=5.0V
I
C
=10mA
I
C
=50mA
I
C
=10mA
I
C
=50mA
V
CE
=5.0V
V
CE
=10V
V
CB
=10V
f=1.0MHz
I
C
=0
I
C
=10mA
I
C
=50mA
I
C
=1.0mA
I
B
=1.0mA
I
B
=5.0mA
I
B
=1.0mA
I
B
=5.0mA
I
C
=10mA
I
C
=10mA
I
E
=0
50
50
20
40
200
160
190
0.06
0.09
0.7
0.8
0.68
110
2.2
0.3
0.4
0.2
5.0
0.15
0.3
1.0
1.0
0.75
V
V
V
V
V
MHz
pF
μs
μs
μs
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
0.1
μA
0.1
400
μA
参数
Parameter
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Turn-off Time
Storage Time
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