BR4953D
Rev.H Oct.-2018
描述
/
Descriptions
DATA SHEET
SOP-8 塑封封装双 P 沟道 MOS 场效应管。Dual
P-Channel MOSFET in a SOP-8 Plastic Package.
特征
/ Features
超高密度设计，导通电阻小，可靠性½。
Super high dense cell design for low R
DS(ON)
,Rugged and reliable.
用途
/
Applications
用于电源管理，便携式设备和电池供电系统。
Power Management in Notebook computer, Portable Equipment and Battery powered systems.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
8
7
6
5
1
2
3
4
PIN1：S1
PIN 5：D2
印章代码
Marking
PIN 2：G1
PIN 6：D2
/ Marking
PIN 3：S2
PIN 7：D1
PIN 4：G2
PIN 8：D1
4953D
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BR4953D
Rev.H Oct.-2018
极限参数
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
P
D
* (Ta=25
℃
)
P
D
* (Ta=100
℃
)
T
j
T
stg
R
θJA
*
数值
Rating
-20
±12
-3.0
-12
-2.0
2
0.8
150
-55½150
62.5
单½
Unit
V
V
A
A
A
W
W
℃
℃
℃
/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Note:
* Surface Mounted on 1in2 pad area, t
≤
10sec.
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SDa
Q
gb
Q
gsb
Q
gdb
V
DS
=-6V
I
DS
=-2.7A
a
参数
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
测试条件
Test Conditions
V
GS
=0V
V
DS
=-16V
V
DS
=-16V
T
J
=85°C
V
DS
=VGS
V
GS
=±12V
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-2.5V
V
GS
=0V
I
DS
=-250μA
V
GS
=0V
V
GS
=0V
I
DS
=-250μA
V
DS
=0V
I
DS
=-2.7A
I
DS
=-2.7A
I
DS
=-2.2A
I
SD
=-1.0A
V
GS
=-4.5V
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-20
-1
-10
-0.50
-0.8
-1.0
±100
85
82
130
-0.7
5.8
0.85
1.7
97
110
150
-1.3
10
mΩ
V
nC
nC
nC
μA
V
nA
V
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BR4953D
Rev.H Oct.-2018
电性½参数
/ Electrical Characteristics(Ta=25℃)
DATA SHEET
参数
Parameter
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
符号
Symbol
R
Gb
C
issb
C
ossb
C
rssb
t
d(ON) b
T
rb
T
d(OFF)
T
fb
b
测试条件
Test Conditions
V
GS
=0V
V
DS
=0V
F=1MHz
V
DS
=-6V
V
GS
=0V
Frequency=1.0MHz
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
6
415
223
84
13
25
60
70
60
ns
pF
Ω
V
DD
=-6V
I
DS
=-1A
R
G
=6Ω
R
L
=6Ω
V
GEN
=-10V
36
42
34
Notes:
a : Pulse test ; pulse width≤300μs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
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BR4953D
Rev.H Oct.-2018
电参数曲线图
/ Electrical Characteristic Curve
DATA SHEET
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BR4953D
Rev.H Oct.-2018
外½尺寸图
/ Package Dimensions
DATA SHEET
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