LV10S45E
Rev.F May.-2016
DATA SHEET
描述
/
Descriptions
TO-277
塑封封装 肖特基二极管。
TO-277 Plastic package Schottky diode .
特征
/ Features
高正向浪涌½力，超½正向压降
V
F
(typ)=0.2V，优异的高温稳定性。
High Forward Surge Capability, Ultra Low Forward Voltage Drop
V
F
(typ)=0.2V,
Excellent High
Temperature Stability.
用途
/
Applications
用于高频、½压、大电流整流二极管，续流二极管，保护二极管。
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
3
2
PIN1：Anode
放大及印章代码
PIN 2：Cathode PIN 3：Anode
/ h
FE
Classifications & Marking
Suggested Pad layout
见印章说明。See
Marking Instructions.
http://www.fsbrec.com
1
/
6
LV10S45E
Rev.F May.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
I
FSM
T
j MAX
T
stg
R
θJA
（
Note 1
）
数值
Rating
45
31.5
10
250
150
-55½150
73
单½
Unit
V
V
A
A
℃
℃
℃
/W
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Peak Reverse Voltage
RMS Reverse voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Junction Temperature Range
Storage Temperature Range
Typical Thermal Resistance
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
R
测试条件
Test Conditions
I
R
=0.5mA
I
F
=2A
T
J
=25℃
T
J
=125℃
T
J
=25℃
T
J
=125℃
T
J
=25℃
T
J
=100℃
T
J
=125℃
I
F
=2A
I
F
=10A
I
F
=10A
V
R
=45V
最小值 典型值 最大值
Min
Typ
Max
45
0.33
0.20
0.42
0.35
0.06
0.12
12
50
0.46
0.38
单½
Unit
V
V
V
V
V
mA
mA
mA
参数
Parameter
Reverse Voltage
Forward voltage
V
F
Instantaneous Reverse Current
注/Notes：
I
R
（
Note 2
）
V
R
=45V
V
R
=45V
1.FR-4PCB，2盎司铜，最½建议焊盘布局。/FR-4
PCB, 2oz. Copper, minimum recommended pad
layout per.
2. ½用极短的测试时间，
以½量减少自热效应。
/Short
duration pulse test used to minimize self-heating
effect.
http://www.fsbrec.com
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嵌入式系统
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