MJE13003DGT
Rev.E Mar.-2016
DATA SHEET
描述
特征
/
Descriptions
SOT-89 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a SOT-89 Plastic Package.
/ Features
快速½换。
High Speed Switching
用途
/
Applications
主要用于节½灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters switching ,regulators, etc.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1:Base
印章代码
Marking
PIN 2:Collector
PIN 3:Emitter
/ Marking
H03G
**
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MJE13003DGT
Rev.E Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Ta=25
℃
)
T
j
T
sag
数值
Rating
600
400
9.0
1.3
1.0
150
-55½150
单½
Unit
V
V
V
A
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)
t
f
t
s
f
T
测试条件
Test Conditions
I
C
=1mA
I
E
=0
I
C
=10mA
I
E
=1mA
V
CB
=600V
V
CE
=400V
V
EB
=9.0V
V
CE
=5V
V
CE
=5V
V
CE
=5V
I
C
=500mA
I
C
=1.0A
I
C
=500mA
V
CE
=5V
(UI9600)
V
CE
=10V
f=1MHz
I
B
=0
I
C
=0
I
E
=0
I
B
=0
I
C
=0
I
C
=200mA
I
C
=1mA
I
C
=1.2A
I
B
=100mA
I
B
=500mA
I
B
=100mA
I
C
=0.25A
I
C
=0.1A
5
10
7
5
0.5
0.6
1.2
0.8
3.5
V
V
V
μS
μS
MHz
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
600
V
400
9.0
0.1
0.1
0.1
40
V
V
mA
mA
mA
参数
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-Off Current
Collector cut-off current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Fall time
Storage time
Transition Frequency
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