9014M
Rev.F Apr.-2017
描述
特征
/ Features
/
Descriptions
DATA SHEET
SOT-23 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a SOT-23 Plastic Package.
P
C
大,h
FE
高且特性½,与 9015M 互补。
High P
C
and h
FE
, excellent h
FE
linearity, complementary pair with 9015M.
用途
/
Applications
用于½电平、½噪声的前½放大器。
low frequency, low noise pre-amplifier.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
3
1
2
PIN1：Base
放大及印章代码
PIN 2： Emitter
PIN 3：Collector
/ h
FE
Classifications & Marking
A
60½150
HJ6A
B
100½300
HJ6B
C
200½600
HJ6C
D
400½1000
HJ6D
h
FE
Classifications
Symbol
h
FE
Range
Marking
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9014M
Rev.F Apr.-2017
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
50
45
5.0
100
400
150
-55½150
单½
Unit
V
V
V
mA
mW
℃
℃
DATA SHEET
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
NF
测试条件
Test Conditions
I
C
=0.1mA
I
C
=1.0mA
I
E
=0.1mA
V
CB
=50V
V
EB
=5.0V
V
CE
=5.0V
I
C
=100mA
I
C
=100mA
V
CE
=5.0V
V
CE
=5.0V
V
CB
=10V
f=1.0MHz
V
CE
=5.0V
R
g
=2.0KΩ
Δf=200Hz
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
=1.0mA
I
B
=5.0mA
I
B
=5.0mA
I
C
=2.0mA
I
C
=10mA
I
E
=0
I
C
=0.2mA
f=1.0KHz
150
60
0.14
0.84
0.63
270
2.2
0.9
3.5
10
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
50
45
5.0
0.05
0.05
1000
0.3
1.0
0.7
V
V
V
MHz
pF
dB
V
V
V
μA
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
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