S9013
General Purpose Transistors
NPN Silicon
Package outline
SOT-23
Features
•
High collector current. (500mA)
•
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
0.040 (1.02)
0.035 (0.89)
•
Suffix "-H" indicates Halogen-free part, ex. S9013 -H.
0.020 (0.50)
(C)
0.120 (3.04)
0.110 (2.80)
.081(2.04)
.070(1.78)
(B)
(A)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-23
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.055 (1.40)
0.047 (1.20)
0.098 (2.50)
0.083 (2.10)
0.024 (0.60)
0.018 (0.45)
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
0.044 (1.10)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
Rating
Collector–emitter voltage
Collector–base voltage
Emitter–base voltage
Collector current — continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
25
40
5
500
Unit
V
V
V
mA
Thermal characteristics
PARAMETER
Total device dissipation FR-5 board
(1)
Thermal resistance
Total device dissipation alumina
substrate(2)
Thermal resistance
Operating junction temperature range
Storage temperature range
1. FR-5 = 1.0 X 0.75 X0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
T
A
= 25°C
Derate above 25°C
Junction to ambient
T
A
= 25°C
Derate above 25°C
Junction to ambient
R
θJA
T
J
T
STG
-55
-55
R
θJA
P
D
Symbol
P
D
MIN.
TYP.
MAX. UNIT
225
1.8
556
300
2.4
417
+150
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
.0070 (0.177)
.0034 (0.085)
Revision
D
0.015 (0.37)
Page.
3
Page 1
AS-3140076
S9013
General Purpose Transistors
NPN Silicon
Electrical characteristics
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Off characteristics
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base breakdown voltage
Collector cutoff current
Emitter cutoff current
I
C
=1mA
I
E
= 100uA
I
C
= 100uA
V
CB
= 35V
V
EB
= 4V
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
25
5
40
150
150
V
V
V
nA
nA
On characteristics
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
DC current gain *
I
C
= 500mA I
B
= 50mA
I
C
= 500mA I
B
= 50mA
I
C
= 10mA
V
CB
= 1V
V
CE(sat)
V
BE(sat)
V
BE(sat)
h
FE
70
0.6
1.2
0.7
400
V
V
V
-
I
C
=100mA V
CE
= 1V
h
FE
values are classified as follows:
*
h
FE
L
70~200
H
200~350
J
300~400
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
3
Page 2
AS-3140076
S9013
General Purpose Transistors
NPN Silicon
Pinning information
Pin
PinB
PinC
PinE
Base
Collector
Emitter
B
E
Simplified outline
C
Symbol
C
B
E
Marking
Type number
S9013
Marking code
J3
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
3,000
COMPONENT
SPACING
(m/m)
4.0
BOX
(pcs)
30,000
INNER
BOX
(m/m)
183*123*183
REEL
DIA,
(m/m)
178
CARTON
SIZE
(m/m)
382*257*387
CARTON
(pcs)
240,000
APPROX.
GROSS WEIGHT
(kg)
11.6
SOT-23
7"
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
3
Page 3
AS-3140076
嵌入式系统
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