AT7N65S
N-Channel Enhancement Mode Power MOSFET
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance,Junction-to-Case
Single pulse avalanche energy
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJC
E
AS
T
J
T
STG
Value
650
±30
7
28
142
2.35
435
150
-55 ~ +150
Unit
V
V
A
A
W
/W
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
Parameter
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Drain-source on-resistance
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-Drain Diode characteristics
Diode Forward Current
Diode Forward voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1)
2)
Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.
Guaranteed by design, not subject to production testing.
Symbol
Test Condition
Min.
Typ.
Max.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS
= 0V, I
D
=250µA
V
DS
=650V,V
GS
= 0V
V
GS
=±30V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=3.5A
650
1
±100
2
1.35
4
1.5
1)
R
DS(on)
2)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1)
1210
V
DS
=25V,V
GS
=0V,f =1MHz
140
40
29
V
DS
=520V,V
GS
=10V,ID =7A
9
19
50
V
DD
=300V, I
D
=7A,R
GEN
=25Ω
150
380
180
nS
nC
pF
I
S
V
DS
t
rr
Q
rr
V
GS
=0V, I
S
=7A
TJ = 25°C, IF =7A
1)
di/dt = 100A/μs
490
3.2
7
1.4
Page 2
Document ID
AS-3150155
Issued Date
2003/03/08
Revised Date
2012/05/16
℃
℃
Unit
V
µA
nA
V
Ω
A
V
nS
µC
Revision
D
Page.
7
℃
mJ
微控制器 MCU
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