BC817-16
BC817-25
BC817-40
SOT-23 NPN Plastic-Encapsulate Transistors
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
SO T-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
unless otherwise noted)
Value
50
45
5
0.5
0.3
150
-55-150
Unit
V
V
V
A
W
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
unless otherwise specified)
Test conditions
I
C
= 10 A, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 1 A, I
C
=0
V
CB
= 45 V , I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 1 V, I
C
= 500mA
V
CB
=10V ,f=1MHz
V
CE
= 5 V, I
C
= 10mA
f=100MHz
100
10
100
40
0.7
1.2
1.2
V
V
V
pF
MHz
Min
50
45
5
0.1
0.1
600
Typ
Max
Unit
V
V
V
A
A
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
C
ob
f
T
CLASSIFICATION OF
h
FE
(1)
Rank
Range
Marking
BC817-16
100-250
6A
BC817-25
160-400
6B
BC817-40
250-600
6C
Document ID
AS-222645
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
3
嵌入式系统
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