MMBT2045
SOT-23-6LPlastic-Encapsulate Transistors
Dual 40V complementary transistors
FEATURES
40V complementary device
High h
FE
Mounting cost and area can be cut in half
SOT-23-6L
MARKING
EQUIVALENT CIRCUIT
PIN1
Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (T
a
=25℃)
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
P
C
R
θJA
T
J
T
stg
Parameter
NPN
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current- Peak
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
40
40
30
7
1.5
5
350
357
150
-55~+150
Value
PNP
-40
-40
-30
-7
-1.5
-5
350
357
V
V
V
V
A
A
mW
℃/W
℃
℃
Unit
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TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
5
Page 1
AS -1212055
MMBT2045
SOT-23-6LPlastic-Encapsulate Transistors
Dual 40V complementary transistors
ELECTRICAL CHARACTERISTICS
Tr1 NPN (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)CEX
V
(BR)EBO
I
CBO
I
CER
I
EBO
h
FE
*
V
CE(sat)
*
I
C
=750mA, I
B
=15mA
V
BE(sat)
*
1.2
V
Test
conditions
Min
40
30
40
7
20
20
20
180
500
0.375
V
Typ
Max
Unit
V
V
V
V
nA
nA
nA
I
C
=100μA, I
E
=0
I
C
=10mA, I
B
=0
I
C
=1μA, V
BE(off)
=-0.5V
I
E
=100μA, I
C
=0
V
CB
=32V, I
E
=0
V
CE
=16V, R≤1kΩ
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=100mA
Tr2 PNP (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)CEX
V
(BR)EBO
I
CBO
I
CER
I
EBO
h
FE
*
V
CE(sat)
*
I
C
=-750mA, I
B
=-15mA
V
BE(sat)
*
-1.2
V
*Pulse
Test : Pulse Width≤300µs, Duty Cycle≤2%.
Test
conditions
Min
-40
-30
-40
-7
-20
-20
-20
180
500
-0.375
V
Typ
Max
Uni
t
V
V
V
V
nA
nA
nA
I
C
=-100μA, I
E
=0
I
C
=-10mA, I
B
=0
I
C
=-1μA, V
BE(off)
=0.5V
I
E
=-100μA, I
C
=0
V
CB
=-32V, I
E
=0
V
CE
=-16V, R≤1kΩ
V
EB
=-6V, I
C
=0
V
CE
=-2V, I
C
=-100mA
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
5
Page 2
AS -1212055
Typical Characteristics
Static Characteristic
300
10000
h
FE
COMMON EMITTER
V
CE
=2V
——
I
C
COMMON EMITTER
T
a
=25
℃
(mA)
250
0.80mA
0.72mA
h
FE
DC CURRENT GAIN
0.64mA
200
1000
I
C
COLLECTOR CURRENT
0.56mA
150
T
a
=100
℃
0.48mA
0.40mA
T
a
=25
℃
100
100
0.32mA
0.24mA
50
0.16mA
I
B
=0.08mA
0
0
1
2
3
4
5
10
1
10
100
1000
1500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1200
V
BEsat
——
β=50
I
C
1000
V
CEsat
β=50
——
I
C
1000
800
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
100
T
a
=100
℃
600
T
a
=25
℃
T
a
=25
℃
400
T
a
=100
℃
200
0.1
10
1
10
100
1000 1500
1
10
100
1000 1500
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
1500
1000
I
C
COMMON EMITTER
V
CE
=2V
——
V
BE
500
f
T
COMMON EMITTER
VCE=10V
T
a
=25
℃
——
I
C
(mA)
100
I
C
TRANSITION FREQUENCY
800
1000
1200
T=
a
10
0
℃
f
T
10
1
0.1
0
200
400
600
(MHz)
T =2
5
℃
a
100
10
1.53
COLLECTOR CURRENT
10
100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
1000
C
ob
/C
ib
f=1MHz
I
E
=0/I
C
=0
——
V
CB
/V
EB
400
P
C
——
T
a
350
(pF)
T
a
=25
℃
100
COLLECTOR POWER DISSIPATION
P
C
(mW)
300
C
T
C
ib
250
CAPACITANCE
200
C
ob
10
150
100
50
1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
5
Page 3
AS -1212055
Typical Characteristics
Static Characteristic
-300
10000
h
FE
COMMON EMITTER
V
CE
= -2V
——
I
C
COMMON EMITTER
T
a
=25
℃
(mA)
-250
-0.80mA
-0.72mA
h
FE
DC CURRENT GAIN
-200
I
C
-0.64mA
-0.56mA
1000
COLLECTOR CURRENT
T
a
=100
℃
-150
-0.48mA
-0.40mA
T
a
=25
℃
100
-100
-0.32mA
-0.24mA
-50
-0.16mA
I
B
=-0.08mA
-0
-0
-1
-2
-3
-4
-5
10
-1
-10
-100
-1000
-1500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1200
V
BEsat
——
β=50
I
C
-1500
-1000
V
CEsat
β=50
——
I
C
-1000
-800
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-100
-600
T
a
=25
℃
T
a
=100
℃
-400
T
a
=100
℃
T
a
=25
℃
-10
-200
-0.1
-1
-10
-100
-1000 -1500
-1
-10
-100
-1000 -1500
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
-1500
-1000
I
C
COMMON EMITTER
V
CE
=-2V
——
V
BE
500
f
T
COMMON EMITTER
VCE=-10V
T
a
=25
℃
——
I
C
(mA)
-100
I
C
TRANSITION FREQUENCY
-800
-1000
-1200
f
T
T=
a
10
0
℃
-10
-1
-0.1
-0
-200
-400
-600
(MHz)
T =2
5
℃
a
100
10
-1.25
COLLECTOR CURRENT
-10
-100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
1000
C
ob
/C
ib
f=1MHz
I
E
=0/I
C
=0
——
V
CB
/V
EB
400
P
C
——
T
a
350
(pF)
T
a
=25
℃
100
COLLECTOR POWER DISSIPATION
P
C
(mW)
300
C
T
250
CAPACITANCE
C
ib
C
ob
10
200
150
100
50
1
-0.1
0
-1
-10
-30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
5
Page 4
AS -1212055
MMBT2045
SOT-23-6LPlastic-Encapsulate Transistors
Dual 40V complementary transistors
SOT-23-6L Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
θ
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
SOT-23-6L Suggested Pad Layout
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
5
Page 5
AS -1212055
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