AS2301
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
FEATURE
TrenchFET Power MOSFET
SOT-23
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
1. GATE
2. SOURCE
3. DRAIN
MARKING: A1
■
Maximum ratings (T
a
=25℃ unless otherwise noted)
Characteristic
特性參數
Drain-Source V oltage
漏極-源極電壓
Gate- Source V oltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
TotalDevice Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Junction
結溫
Storage Temperature
儲存溫度
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
Max
最大值
-20
+10
-2.8
-10
Unit
單½
V
V
A
A
P
D
900
mW
T
J
T
stg
150
-55to+150
℃
℃
http://www.anbonsemi.com
TEL:886-755-23776891
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 1
AS-3150031
AS2301
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
■
Maximum ratings (T
a
=25℃ unless otherwise noted)
Characteristic
特性參數
Drain-Source Breakdown V oltage
漏極-源極擊穿電壓(I
D
= -250uA,V
GS
=0V)
Gate Threshold V oltage
栅極開启電壓(I
D
= -250uA,V
GS
= V
DS
)
Diode Forward V oltageDrop
内附二極管正向壓降(I
S
= -0.75A,V
GS
=0V)
Zero Gate V oltageDrain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= -16V)
(V
GS
=0V, V
DS
= -16V, T
A
=
55℃)
Gate Body Leakage
栅極漏電流(V
GS
=+10V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -2.8A,V
GS
= -4.5V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -2A,V
GS
= -2.5V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Output Capacitance
輸出電容
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Turn-ON Time
开启時間
(V
DS
= -10V, I
D
= -2.8A, R
GEN
=6
Ω
)
Turn-OFF Time
关断時間
(V
DS
= -10V, I
D
= -2.8A, R
GEN
=6
Ω
)
Pulse Width<300μs; Duty Cycle<2.0%
Symbol
符號
BV
DSS
V
GS(th)
V
SD
Min
最小值
-20
-0.5
Typ
典型值
—
—
Max
最大值
—
-1.5
Unit
單½
V
V
—
—
-1.5
V
I
DSS
—
—
-1
-10
+100
100
u
A
I
GSS
R
DS(ON)
R
DS(ON)
C
ISS
C
OSS
t
(on)
—
—
—
—
n
A
mΩ
—
—
—
600
120
—
mΩ
pF
—
120
—
pF
—
8
—
ns
t
(off)
—
60
—
ns
http://www.anbonsemi.com
TEL:886-755-23776891
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 2
AS-3150031
AS2301
627 3DFNDJH 2XWOLQH 'LPHQVLRQV
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
8°
0°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
627 6XJJHVWHG 3DG /D\RXW
http://www.anbonsemi.com
TEL:886-755-23776891
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 3
AS-3150031
嵌入式系统
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