DATA SHEET
SB2020FCT~SB20200FCT
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
20 to 200 Volts
CURRENT
20 Amperes
ITO-220AB
Unit : inch (mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
• High surge capacity.
MECHANCALDATA
Case: ITO-220AB Molded plastic
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
.055(1.4)
.039(1.0)
.114(2.9)
.098(2.5)
.032(.8)
MAX
AC
Positive CT
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T c = 9 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 0 . 0 A , p e r l e g
M a xi m um D C R e ve r s e C ur r e nt T
A
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
A
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L S B 2 0 2 0 C T S B 2 0 3 0 C T S B 2 0 4 0 C T S B 2 0 5 0 C T S B 2 0 6 0 C T S B 2 0 8 0 C T S B 2 0 1 0 0 C T S B 2 0 1 5 0 C T S B 2 0 2 0 0 C T U N I T S
V
RRM
V
RMS
V
DC
I
AV
I
FS M
V
F
0 .5 5
0 .7 5
0 .5
100
2
- 5 0 TO + 1 2 5
- 5 0 TO + 1 5 0
O
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
2 0 .0
200
80
56
80
100
70
100
150
105
150
200
140
200
V
V
V
A
A
0 .8 5
0 .9 2
1
V
I
R
mA
RθJ C
T
J
T
S TG
C /W
O
C
C
O
Note.
Both Bonding and Chip structure are available.
REV.1-APR.22.2005
PAGE . 1
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT,
Amps
PEAK FORWARD SURGE CURRENT,
Amps
25.0
20.0
15.0
10.0
5.0
0
0
240
210
180
150
120
90
60
30
0
1
2
5
10
20
50
100
8.3ms Single
Half Since-Wave
JEDEC Method
50
100
150
CASE TEMPERATURE,
O
C
NO. OF CYCLE AT 60Hz
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE
CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
40
20,30,40V
T
J
=100 C
1.0
O
FORWARD CURRENT, Amps
50,60V
80,100V
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
0.1
T
J
=75 C
O
0.01
T
J
=25 C
O
T
J
= 25 C
Pulse Width = 300 us
1% Duty Cycle
O
0.001
.3
20
40
60
80
100
120
140
.4
.5
.6
.7
.8
0.9
1.0
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHRACTERISTICS
REV.1-APR.22.2005
PAGE . 2
NXP MCU
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