ESMT
Revision History :
Revision 1.0 (Oct. 31, 2006)
- Original
Revision 1.1 (Mar. 02, 2007)
- Modify VOH and VOL
- Delete BGA ball name of packing dimensions
Revision 1.2 (Apr. 27, 2007)
- Rename BGA pin name (BA1 to NC ; BA0 to BA)
- Modify DC Characteristics
Revision 1.3 (May. 14,2007)
- Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns)
M52S32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
1/30
ESMT
SDRAM
M52S32162A
1M x 16Bit x 2Banks
Synchronous DRAM
FEATURES
2.5V power supply
LVCMOS compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-
CAS Latency (1, 2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
Special Function Support.
-
PASR (Partial Array Self Refresh )
-
TCSR (Temperature compensated Self Refresh)
-
DS (Driver Strength)
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
GENERAL DESCRIPTION
The M52S32162A is 33,554,432 bits synchronous high
data rate Dynamic RAM organized as 2 x 1,048,576 words
by 16 bits, fabricated with high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
ORDERING INFORMATION
Part NO.
MAX
Freq.
Package
Comments
Pb-free
Pb-free
Pb-free
Pb-free
M52S32162A -10TG 100MHz 54 PIN TSOP(II)
M52S32162A -7.5TG 133MHz 54 PIN TSOP(II)
M52S32162A -10BG 100MHz 54 Ball VFBGA
M52S32162A -7.5BG 133MHz 54 Ball VFBGA
PIN CONFIGURATION (TOP VIEW)
TOP View
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
NC
BA
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ1 5
V
S SQ
DQ1 4
DQ1 3
V
D DQ
DQ1 2
DQ1 1
V
S SQ
DQ1 0
DQ9
V
D DQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
54 Ball FVBGA(8mmx8mm)
1
2
3
4
5
6
7
8
9
A
V
S S
D Q1 5
V
S S Q
V
DDQ
DQ0
V
DD
B
DQ14
D Q1 3
V
DDQ
V
S S Q
DQ2
DQ1
C
DQ12
DQ11
V
SS Q
V
DDQ
DQ4
DQ3
D
DQ10
DQ9
V
DDQ
V
S SQ
DQ6
DQ5
E
DQ8
NC
V
SS
V
DD
LDQM
DQ7
F
UDQM
CLK
A11
CKE
A9
CAS
BA
RAS
NC
WE
G
NC
CS
H
A8
A7
A6
A0
A1
A1 0
J
V
SS
A5
A4
A9
A2
V
DD
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
2/30
ESMT
FUNCTIONAL BLOCK DIAGRAM
M52S32162A
LWE
Bank Select
Data Input Register
LDQM
1M x 16
DQi
CLK
ADD
1M x 16
Column Decoder
Latency & Burst Length
LCKE
Programming Register
LRAS
LCBR
LWE
LCAS
LWCBR
LDQM
Timing Register
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
PIN FUNCTION DESCRIPTION
Pin
CLK
CS
CKE
A0 ~ A11
BA
RAS
Name
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM.
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row / column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, column address : CA0 ~ CA7
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with
CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS ,
WE
active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
CAS
Column Address Strobe
WE
Write Enable
Data Input / Output Mask
L(U)DQM
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
3/30
ESMT
DQ0 ~ 15
VDD/VSS
VDDQ/VSSQ
N.C/RFU
Data Input / Output
Power Supply/Ground
Data Output Power/Ground
No Connection/
Reserved for Future Use
M52S32162A
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ + 150
0.7
50
Unit
V
V
°
C
W
MA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0
°C
~ 70
°C
)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Symbol
V
DD
,V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
Min
2.3
0.8 x V
DDQ
-0.3
V
DDQ -
0.2
-
-5
-5
Typ
2.5
2.5
0
-
-
-
-
Max
2.7
V
DDQ
+0.3
0.3
-
0.2
5
5
Unit
V
V
V
V
V
uA
uA
Note
1
2
I
OH
=-0.1mA
I
OL
= 0.1mA
3
4
Note :
1.V
IH
(max) = 3.0V AC for pulse width
≤
3ns acceptable.
2.V
IL
(min) = -1.0V AC for pulse width
≤
3ns acceptable.
3.Any input 0V
≤
V
IN
≤
V
DDQ
+0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V
≤
V
OUT
≤
V
DDQ
.
CAPACITANCE
(V
DD
= 2.5V, T
A
= 25
°C
, f = 1MHz)
Pin
CLOCK
RAS , CAS ,
WE
, CS , CKE, LDQM,
UDQM
ADDRESS
DQ0 ~DQ15
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
-
-
-
-
Max
4.0
4.0
4.0
6.0
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
4/30
ESMT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0
°C
~ 70
°C
)
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
Test Condition
CAS
Latency
M52S32162A
Version
-7.5
80
0.3
0.2
9
-10
60
Unit Note
I
CC1
I
CC2P
I
CC2PS
I
CC2N
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0Ma, Page Burst
All Band Activated, tCCD = tCCD (min)
t
RC
≥
t
RC
(min)
TCSR range
mA
mA
mA
mA
1
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
8
2
1.5
15
8
80
40
45
180
160
15
60
40
70
200
180
mA
mA
mA
mA
mA
1
I
CC4
I
CC5
mA
2
°C
Self Refresh Current
I
CC6
CKE
≤
0.2V
2 Banks
1 Bank
uA
uA
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 64ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
5/30
单片机
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