(OLWH07
DRAM
FEATURES
y
y
y
y
y
y
y
y
y
y
M11L416256A/M11L416256SA
256 K x 16 DRAM
EDO PAGE MODE
ORDERING INFORMATION - PACKAGE
40-pin 400mil SOJ
44 / 40-pin 400mil TSOP (Type II)
X16 organization
EDO (Extended Data-Output) access mode
2
CAS
Byte/Word Read/Write operation
Single 3.3V (
±
10%) power supply
LVTTL-compatible inputs and outputs
512-cycle refresh in 8ms
Refresh modes :
RAS
only,
CAS
BEFORE
RAS
(CBR)
and HIDDEN capabilities
Optional self-refresh capability (S-ver. only)
JEDEC standard pinout
Key AC Parameter
t
RAC
-25
-28
-30
-35
-40
25
28
30
35
40
t
CAC
8
9
9
10
11
t
RC
43
48
55
65
75
t
PC
10
11
12
14
16
PRODUCT NO.
M11L416256A-25J/T
M11L416256A-28J/T
M11L416256A-30J/T
M11L416256A-35J/T
M11L416256A-40J/T
M11L416256SA-25J/T
M11L416256SA-28J/T
M11L416256SA-30J/T
M11L416256SA-35J/T
M11L416256SA-40J/T
Refresh
PACKING
TYPE
Normal
SOJ/TSOPII
Self-Refresh
SOJ/TSOPII
GENERAL DESCRIPTION
The M11L416256 series is a randomly accessed solid state memory, organized as 262,144 x 16 bits device. It offers
Extended Data-Output , 3.3V(
±
10%) single power supply. Access time (-25,-28,-30,-35,-40) , self-refresh and package type
(SOJ, TSOP II) are optional features of this family. All these family have
CAS
- before -
RAS
,
RAS
-only refresh and Hidden
refresh capabilities.
Two access modes are supported by this device: Byte access and Word access. Use only one of the two
CAS
and leave
the other staying high will result in a BYTE access. WORD access happens when two
CAS
(
CASL
,
CASH
) are used.
CASL
transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and
CASH
transiting low will
output or input data into the upper byte (IO8~15).
PIN ASSIGNMENT
SOJ Top View
V
C C
I/O0
I/O1
I/O2
I/O3
V
C C
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RA S
NC
A0
A1
A2
A3
V
C C
TSOP (TypeII) Top View
V
S S
I/O1 5
I/O1 4
I/O1 3
I/O1 2
V
S S
I/O1 1
I/O1 0
I/O9
I/O8
NC
CA SL
C ASH
OE
A8
A7
A6
A5
A4
V
SS
V
C C
I/O 0
I/O 1
I/O 2
I/O 3
V
C C
I/O 4
I/O 5
I/O 6
I/O 7
NC
NC
WE
RA S
NC
A0
A1
A2
A3
V
C C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
SS
I/O 15
I/O 14
I/O 13
I/O 12
V
SS
I/O 11
I/O 10
I/O 9
I/O 8
NC
C AS L
C AS H
OE
A8
A7
A6
A5
A4
V
SS
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
1/16
(OLWH07
FUNCTIONAL BLOCK DIAGRAM
WE
RAS
CASL
CASH
CONTROL
LOGIC
M11L416256A/M11L416256SA
DATA-IN BUFFER
16
IO0
:
IO15
CLOCK
GENERATOR
DATA-OUT
BUFFER
9
COLUMN
DECODER
512
16
OE
16
9
A0
A1
A2
A3
COLUMN
ADDRESS
BUFFER
REFRESH
CONTROLER
SENSE AMPLIFIERS
I/O GATING
8
512 x 16
A4
A5
A6
A7
A8
9
99
ROW.
ADDRESS
BUFFERS(9)
9
ROW
DECODER
512 x 512 x 16
MEMORY
ARRAY
REFRESH
COUNTER
512
V
CC
V
BB
GENERATOR
V
SS
PIN DESCRIPTIONS
PIN NO.
16~19,22~26
14
28
29
13
27
2~5,7~10,31~34,36~39
1,6,20
21,35,40
11,12,15,30
PIN NAME
A0~A8
RAS
CASH
CASL
WE
OE
TYPE
Input
Input
Input
Input
Input
Input
Input / Output
Supply
Ground
-
DESCRIPTION
Address Input
Row Address : A0~A8
Column Address : A0~A8
Row Address Strobe
Column Address Strobe / Upper Byte Control
Column Address Strobe / Lower Byte Control
Write Enable
Output Enable
Data Input / Output
Power, 3.3V
Ground
No Connect
I/O0 ~ I/O15
V
CC
V
SS
NC
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
2/16
(OLWH07
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-0.5V to +4.6V
Operating Temperature, T
A
(ambient) ….0
°
C to +70
°
C
Storage Temperature (plastic) ……….-55
°
C to +150
°
C
Power Dissipation …………………………………0.8W
Short Circuit Output Current ……………………50mA
M11L416256A/M11L416256SA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C ; V
CC
= 3.3V
±
10% unless otherwise noted)
PARAMETER
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Note : 1.All Voltages referenced to V
SS
0V
≤
V
IN
≤
V
IH
(max)
0V
≤
V
OUT
≤
V
CC
Output(s) disable
I
OH
= -2 mA
I
OL
= 2 mA
CONDITIONS
SYMBOL
V
CC
V
SS
V
IH
V
IL
I
LI
I
LO
V
OH
V
OL
MIN
3.0
0
2.0
-0.3
-10
-10
2.4
-
MAX
3.6
0
V
CC
+0.3
0.8
10
10
-
0.4
UNITS NOTES
V
V
V
V
µ
A
µ
A
V
V
1
1
1
PARAMETER
Operating Current
Standby Current
CONDITIONS
RAS
,
CAS
cycling , t
RC
=min
SYMBOL
I
CC1
I
CC2
MAX
-25
-28
-30
-35
-40
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
µ
A
2
1,3
1
1,2
210 190 170 150 135
4
2
4
2
4
2
4
2
4
2
TTL interface ,
RAS
,
CAS
= V
IH
,
D
OUT
=High-Z
CMOS interface,
RAS
,
CAS
≥
V
CC
-0.2V
RAS
only refresh Current
t
RC
= min
t
PC
= min
RAS
=V
IH
,
CAS
= V
IL
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
210 190 170 150 135
210 190 170 150 135
5
5
5
5
5
EDO Page Mode Current
Standby Current
CAS
Before
RAS
Refresh
Current
t
RC
= min
RAS
,
CAS
≤
0.2V, D
OUT
= High-Z,
210 190 170 150 135
400 400 400 400 400
Battery Backup Current
(S-ver. only)
Self Refresh Current
(S-ver. only)
CMOS interface
RAS
=
CAS
= V
IL
,
WE
=
OE
= A0~A8 = V
CC
-0.2 or 0.2V
DQ0~DQ15 = V
CC
-0.2, 0.2V or open
I
CC8
400 400 400 400 400
µ
A
Note
:
1. I
CC
max is specified at the output open condition.
2. Address can be changed twice or less while
RAS
=V
IL .
3. Address can be changed once or less while
CAS
=V
IH
.
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
3/16
(OLWH07
CAPACITANCE
(Ta = 25
°
C , V
CC
= 3.3V
±
10%)
PARAMETER
Input Capacitance (address)
Input Capacitance (
RAS
,
CASH
,
CASL
,
WE
,
OE
)
Output capacitance (I/O0~I/O15)
SYMBOL
C
I1
C
I2
C
I / O
-
-
-
M11L416256A/M11L416256SA
TYP
MAX
5
7
10
UNIT
pF
pF
pF
AC ELECTRICAL CHARACTERISTICS
(Ta = 0 to 70
°
C , V
CC
=3.3V
±
10%, V
SS
= 0V) (note 14)
Test Conditions
Input timing reference levels : 0.8V, 2.0V
Output reference level : V
OL
= 0.8V, V
OH
=2.0V
Output Load : 2TTL gate + CL (50pF)
Assumed t
T
= 2ns
PARAMETER
Read or Write Cycle Time
Read Write Cycle Time
EDO-Page-Mode Read or Write Cycle
Time
EDO-Page-Mode Read-Write Cycle
Time
Access Time From
RAS
Access Time From
CAS
Access Time From
OE
Access Time From Column Address
Access Time From
CAS
Precharge
SYMBOL
t
RC
t
RWC
t
PC
t
PCM
t
RAC
t
CAC
t
OAC
t
AA
t
ACP
t
RAS
t
RASC
t
RSH
t
RP
t
CAS
t
CSH
t
CP
t
RCD
t
CRP
t
ASR
t
RAH
t
RAD
t
ASC
t
CAH
t
AR
t
RAL
t
RCS
-25
-28
-30
-35
-40
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
43
65
10
32
25
8
8
12
14
25
25
8
15
4
21
4
10
5
0
5
8
0
5
22
12
0
13
17
10K
10K
100K
28
28
9
17
5
24
4
10
5
0
5
8
0
5
24
15
0
13
19
10K
48
70
11
35
28
9
9
15
17
10K
100K
30
55
85
12
37
30
9
9
15
17
10K
35
65
95
14
42
35
10
10
18
20
10K
100K
40
75
105
16
47
40
11
11
20
22
10K
UNIT NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
22
22
4
5,20
13,20
RAS
Pulse Width
RAS
Pulse Width (EDO Page Mode)
RAS
Hold Time
RAS
Precharge Time
CAS
Pulse Width
CAS
Hold Time
CAS
Precharge Time
RAS
to
CAS
Delay Time
CAS
to
RAS
Precharge Time
Row Address Setup Time
Row Address Hold Time
30 100K 35
9
20
5
26
4
10
5
0
5
8
0
5
26
15
0
15
21
10K
10
25
5
30
5
10
5
0
5
8
0
5
30
18
0
40 100K ns
11
30
ns
ns
10K
ns
ns
ns
29
ns
ns
ns
ns
20
ns
ns
ns
ns
ns
15,18
25
10K
6
35
5
24
19
6,23
7,18
19
25
10
5
0
5
RAS
to Column Address Delay Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time (Reference
to
RAS
)
Column Address to
RAS
Lead Time
Read Command Setup Time
17
8
0
5
34
20
0
8
18
18
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
4/16
(OLWH07
(Continued)
PARAMETER
Read Command Hold Time Reference to
CAS
Read Command Hold Time Reference to
RAS
SYMBOL
M11L416256A/M11L416256SA
-25
0
0
3
3
15
6
0
5
22
5
7
5
0
5
22
34
21
17
1.5
50
8
32
10
5
7
4
4
2
2
0
4
3
3
100
43
-50
7
10
5
7
4
4
2
2
0
5
3
3
5
5
-50
7
0
5
24
5
7
5
0
5
24
38
25
19
1.5
50
8
32
10
10
10
4
4
2
2
0
5
3
3
100
55
-50
7
0
0
3
3
15
7
0
5
26
5
8
6
0
5
26
46
31
25
1.5
50
8
32
10
10
10
4
4
2
2
0
5
3
3
100
65
-50
7
-28
0
0
3
3
15
8
0
5
30
5
9
7
0
5
30
51
34
26
2.5
50
8
32
10
10
10
5
5
2
2
0
6
3
3
100
75
-50
7
-30
0
0
3
3
15
8
0
5
34
5
10
8
0
5
34
56
36
27
2.5
50
8
32
-35
0
0
3
3
15
8
-40
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
9,15,19
9
20
10,17,20
17,26
11,15,18
15,25
15
15
15
15,19
12,20
12,20
t
RCH
t
RRH
t
CLZ
t
OFF1
t
OFF2
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
t
RWD
t
AWD
t
CWD
t
T
t
REF
t
REF
t
RPC
t
CSR
t
CHR
t
OEH
t
OES
t
OEHC
t
OEP
t
ORD
t
CLCH
t
COH
t
WHZ
t
RASS
t
RPS
t
CHS
CAS
to Output in Low-Z
Output Buffer Turn-off Delay From
CAS
or
RAS
Output Buffer Turn-off to
OE
Write Command Setup Time
Write Command Hold Time
Write Command Hold Time(Reference to
RAS
)
Write Command Pulse Width
Write Command to
RAS
Lead Time
Write Command to
CAS
Lead Time
Data-in Setup Time
Data-in Hold Time
Data-in Hold Time (Reference to
RAS
)
RAS
to
WE
Delay Time
Column Address to
WE
Delay Time
11
11
11,18
2,3
CAS
to
WE
Delay Time
Transition Time (rise or fall)
Refresh Period (512 cycles)
Refresh Period (512 cycles) Self Refresh
RAS
to
CAS
Precharge Time
CAS
Setup Time(CBR REFRESH)
CAS
Hold Time(CBR REFRESH)
OE
Hold Time From
WE
During Read-Mode-
Write Cycle
1,18
1,19
16
OE
Low to
CAS
High Setup Time
OE
High Hold Time From
CAS
High
OE
Precharge Time
OE
Setup Prior to
RAS
During Hidden Refresh
Cycle
Last
CAS
Going Low to First
CAS
Returning
High
Data Output Hold After
CAS
Returning Low
Output Disable Delay From
WE
Self Refresh
RAS
Low Pulse width
Self Refresh
RAS
High Precharge Time
Self Refresh
CAS
Hold Time
ns
ns
ns
21
µ
s
ns
ns
27,28
27,28
27,28
Elite Memory Technology Inc
Publication Date: Agu. 2001
Revision
:
1.3
5/16
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