BZX85C Series
Zener diode
Features
1. High reliability
2. Low reverse current
3. Very sharp reverse characteristic
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
I=4mm T
L
≤25℃
Type
Symbol
P
V
T
j
T
stg
Value
1.3
175
-65~+175
Unit
W
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=4mm ,T
L
=constant
Symbol
R
thJA
Value
110
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1
Unit
V
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BZX85C Series
Characteristics
(T
j
=25℃ unless otherwise specified)
Ptot –Total Power Dissipation (W)
R
thJA
– Therm. Resist. Junction/
Ambient (K/W)
Tamb – Ambient Temperature(℃)
l – Lead Length (mm)
Figure1.Total Power Dissipation vs. Ambient
Temperature
Figure2. Thermal Resistance vs. Lead Length
Vz-Z-Voltage (V)
r
z
–Differential Z-Resistance (Ω)
C
D
–Diode Capacitance (pF)
Vz-Z-Voltage (V)
Figure3. Diode Capacitance vs. Z-Voltage
Figure4.Differential Z-Resistance vs.Z-Voltage
Zthp – Thermal Resistance for
Pulse Cond. (K/W)
t
p
–Pulse Length (ms)
Figure5. Thermal Response
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Rev. 3e, 1-Nov-2006
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