BAW75 and BAW76
Small-Signal Diode
Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode
Fast switching diodes.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted.)
Parameter
Reverse voltage
Peak reverse voltage
Rectified current (Average)
half wave rectification with resist. load
at T
amb
=25
o
C and f>50Hz
Surge forward current at t<1
u
s and T
j
=25
o
C
Power dissipation at T
amb
=25
o
C
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
BAW75
BAW76
BAW75
BAW76
Symbol
V
R
V
RM
I
O
I
FSM
P
tot
R
θ
JA
T
j
T
S
Limit
25
50
35
75
150
(1)
Unit
Volts
Volts
mA
Amps
mW
o
2.0
500
0.35
(1)
(1)
C/W
o
175
-65 to +175
C
C
o
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
635
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
Forward voltage
BAW75
BAW76
BAW75
BAW75
BAW76
BAW76
BAW75
BAW76
BAW75
BAW76
Symbol
V
F
Test Condition
at I
F
=30mA
at I
F
=100mA
V
R
=25V
V
R
=25V, T
j
=150
O
C
V
R
=50V
V
R
=50V, T
j
=150
O
C
tested with 5
u
A pulses
V
F
=V
R
=0V
I
F
=10mA, I
R
=10mA
I
rr
=1mA
I
F
=10mA, I
R
=1mA
V
R
=6V, R
L
=100
Ω
Min.
-
-
-
-
-
35
75
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
1.0
1.0
100
100
100
100
-
-
4.0
2.0
4
ns
2
Unit
Volt
nA
uA
nA
uA
Volts
pF
Leakage current
I
R
Reverse breakdown voltage
Capacitance
V
(BR)R
C
tot
Reverse recovery time
t
rr
636
详细参数
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