Infrared
Product Data Sheet
LTE-C1901-ZF
Spec No. :DS50-2014-0060
Effective Date: 08/25/2018
Revision: C
LITE-ON DCC
RELEASE
BNS-OD-FC001/A4
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
IR Emitter and Detector
LTE-C1901-ZF
1. Description
Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wireless data
transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed and wide viewing
angels. The product line includes GaAs 940nm IREDs, AlGaAs high speed 850nm IREDs, PIN Photodiodes and
Phototransistors. Photodiodes and Phototransistors can be provided with a filter that reduces digital light noise in the sensor
function, which enables a high signal-to-noise ratio.
1. 1. Features
Meet RoHS, Green Product.
Dome lens Chip LED
Package in 8mm tape on 7" diameter reels.
Compatible with automatic placement equipment.
Compatible With Infrared Reflow Solder Process.
EIA STD package.
1.2. Applications
Infrared emitter
PCB Mounted Infrared Sensor
2. Outline Dimensions
Notes :
1. All dimensions are in millimeters (inches).
2.
Tolerance is ±0.1mm (.004") unless otherwise noted.
3.
Specifications are subject to change without notice.
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Part No. : LTE-C1901-ZF
BNS-OD-C131/A4
IR Emitter and Detector
LTE-C1901-ZF
3. Absolute Maximum Ratings at TA=25℃
℃
Parameter
Power Dissipation
Peak Forward Current(300pps, 10μs pulse)
DC Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Infrared Soldering Condition
Maximum Rating
100
800
50
5
-40° to + 85°C
C
-55° to + 100°
C
C
260° for 10 Seconds Max.
C
Unit
mW
mA
mA
V
4. Electrical / Optical Characteristics at TA=25°
C
Parameter
Radiant Intensity
Peak Emission Wavelength
Spectral Line Half-Width
Forward Voltage
Reverse Current
Viewing Angle
Symbol
I
E
λ
Peak
Δλ
V
F
I
R
2θ
1/2
Min.
0.47
-
-
-
-
-
Typ.
0.8
940
50
1.2
-
150
Max.
1.70
-
-
1.6
10
-
Unit
mW/sr
nm
nm
V
μA
deg
Test Condition
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
V
R
= 5V
NOTE:
1.
θ
1/2
is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
2. The dominant wavelength,
λd
is derived from the CIE chromaticity diagram and represents the single wavelength which defines
the color of the device.
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Part No. : LTE-C1901-ZF
BNS-OD-C131/A4
IR Emitter and Detector
LTE-C1901-ZF
5. Typical Electrical / Optical Characteristics Curves
(25° Ambient Temperature Unless Otherwise Noted)
C
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Part No. : LTE-C1901-ZF
BNS-OD-C131/A4
IR Emitter and Detector
LTE-C1901-ZF
6. Suggest Soldering Pad Dimensions
7. Package Dimensions Of Tape And Reel
Note: All dimensions are in millimeters (inches).
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Part No. : LTE-C1901-ZF
BNS-OD-C131/A4
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