BSS138
50V N-Channel MOSFET
GENERAL FEATURES
●
V
DS
= 50V,I
D
= 0.22A
R
DS(ON)
< 6Ω @ V
GS
=4.5V
R
DS(ON)
< 3.5Ω @ V
GS
=10V
ESD Rating：1000V HBM
●
High Power and current handing capability
●
Lead free product
●
Surface Mount Package
Schematic Diagram
APPLICATIONS
●Direct
Logic-Level Interface: TTL/CMOS
●Drivers:
Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
●Battery
Operated Systems
●Solid-State
Relays
Marking and Pin Assignment
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
S138
BSS138
SOT-23
Ø180mm
Tape Width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T
A
=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Limit
50
±20
0.22
Unit
V
V
A
V
DS
V
GS
I
D
I
D
(70℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
0.18
0.88
0.43
-55 To 175
A
W
℃
I
DM
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
350
℃
/W
ELECTRICAL CHARACTERISTICS (T
A
=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min
Typ
Max
Unit
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Page 1 of 7
Rev.2.2
BSS138
50V N-Channel MOSFET
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn–On Rise Time
Turn-Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=0.44A
1.4
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=25V,I
D
=0.22A,V
GS
=10V
V
DD
=30V,V
GS
=10V,
R
GEN
=6Ω，I
D
=0.22A
2.6
9
20
6
1.7
0.1
0.4
2.4
nC
nS
C
lss
C
oss
C
rss
V
DS
=25V,V
GS
=0V,
F=1.0MHz
30
15
6
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=1mA
V
GS
=10V, I
D
=0.22A
V
GS
=4.5V, I
D
=0.22A
V
DS
=10V,I
D
=0.22A
0.1
0.8
1.5
3.5
6
S
V
Ω
BV
DSS
I
DSS
I
GSS
BV
GSO
V
GS
=0V I
D
=250μA
V
DS
=50V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=0V, I
G
=±250uA
±20
50
1
10
V
μA
uA
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
www.goodark.com
Page 2 of 7
Rev.2.2
BSS138
50V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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Page 3 of 7
Rev.2.2
BSS138
50V N-Channel MOSFET
Normalized On-Resistance
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(Ω)
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Page 4 of 7
Rev.2.2
www.goodark.com
BSS138
50V N-Channel MOSFET
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 7
Rev.2.2
详细参数
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