JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diode
BZX84C2V4 - BZX84C51
A
SOT-23
Dim
A
B
C
D
E
G
H
J
K
J
L
M
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Features
·
·
·
·
Planar Die Construction
350mW Power Dissipation
Zener Voltages from 2.4V - 51V
Ideally Suited for Automated Assembly
Processes
TOP VIEW
B
C
E
D
G
H
K
L
M
All Dimensions in mm
Maximum Ratings
Forward Voltage
Power Dissipation (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
@ I
F
= 10mA
V
F
P
d
R
qJA
T
j,
T
STG
Value
0.9
350
357
-65 to +150
Unit
V
mW
K/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, period = 5ms.
3. f = 1KHz.
DS18001 Rev. P-2
1 of 3
BZX84C2V4 - BZX84C51
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Typical Temperature
Coefficient
@ I
ZT
mV/°C
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10.0
10.0
10.0
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
12.0
12.0
12.0
Type
Number
Marking
Code
Zener Voltage
Range
(Note 2)
V
Z
@ I
ZT
Nom (V) Min (V) Max (V)
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
I
ZT
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Maximum Zener
Impedance
(Note 3)
Z
ZT
@
I
ZT
(W)
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
Z
ZK
@ I
ZK
(W)
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Maximum Reverse
Current
I
R
(mA)
50
20
10
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
BZX84C43
BZX84C47
BZX84C51
Z11/KZB
Z12/KZC
Z13/KZD
Z14/KZE
Z15/KZF
Z16/KZG
Z17/KZH
Z1/KZ1
Z2/KZ2
Z3/KZ3
Z4/KZ4
Z5/KZ5
Z6/KZ6
Z7/KZ7
Z8/KZ8
Z9/KZ9/8Q
Y1/KY1
Y2/KY2
Y3/KY3
Y4/KY4
Y5/KY5
Y6/KY6
Y7/KY7
Y8/KY8
Y9/KY9
Y10/KYA
Y11/KYB
Y12/KYC
Y13/KYD
Y14/KYE
Y15/KYF
Y16/KYG
Y17/KYH
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, period = 5ms.
3. f = 1KHz.
DS18001 Rev. P-2
2 of 3
BZX84C2V4 - BZX84C51
500
See Note 1
50
T
j
= 25°C
C2V7
C3V9
C5V6
C6V8
C8V2
C3V3
P
d
, Power Dissipation (mW)
I
Z
, ZENER CURRENT (mA)
400
40
C4V7
300
30
200
20
100
10
Test Current I
Z
5.0mA
0
0
100
200
0
0
1
3
4
5
6
8
9
7
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
C39
C47
C43 C51
2
10
T
A
, Ambient Temperature, (°C)
Fig. 1 Power Derating Curve
30
T
j
= 25°C
C10
C12
10
Tj = 25°C
I
Z
, ZENER CURRENT (mA)
20
C15
I
Z
, ZENER CURRENT (mA)
8
6
C18
Test current I
Z
2mA
C27
C33
C36
10
C22
Test current I
Z
5mA
4
Test Current I
Z
2mA
2
0
0
10
20
30
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
1000
40
0
10
30 40 50 60 70 80 90 100
V
Z
, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
20
T
j
= 25 °C
C
j
, JUNCTION CAPACITANCE (pF)
V
R
= 1V
V
R
= 2V
100
V
R
= 1V
V
R
= 2V
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
DS18001 Rev. P-2
3 of 3
BZX84C2V4 - BZX84C51
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