JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Power management Dual-transistors
FUMF21N
TRANSISTOR
WBFBP-06C
(2×2×0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
2SA2018 and DTC114E are housed independently
in a package.
Power switching circuit in a single package.
Mounting cost and area can be cut in half.
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
1
MARKING:F21
F21
TR1
MAXIMUM RATINGS T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-15
-12
-6
-0.5
Units
V
V
V
A
0.15
150
-55-150
W
℃
℃
DTR2 Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Limits
50
-10~40
50
100
150
150
-55~150
Unit
V
V
mA
mW
℃
℃
TR1
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
unless
conditions
otherwise
MIN
-15
-12
-6
specified)
TYP
MAX
UNIT
V
V
V
-0.1
-0.1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
I
C
=-10
µ
A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10
µ
A, I
C
=0
V
CB
= -15 V, I
E
=0
V
EB
=- 6V, I
C
=0
V
CE
=-2V, I
C
=-10mA
I
C
=-200mA,I
B
=-10mA
V
CE
=-2V,I
C
=-10mA, f=
100
MHz
V
CB
=-
10
V,I
E
=0,f=
1
MHz
µ
A
µ
A
V
MHz
pF
270
680
-0.25
260
6.5
f
T
C
ob
DTR2
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min.
Typ
Max.
0.5
Unit
V
V
mA
µA
Conditions
V
CC
=5V ,I
O
=100µA
V
O
=0.3V ,I
O
=10 mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V ,I
O
=5mA
3
0.3
0.88
0.5
30
7
0.8
10
1
250
13
1.2
KΩ
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
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