BAS70WS
Schottky Barrier Diode
Features
■
■
■
Low Turn-on Voltage
Fast Switching
PN Junction Guard for Transient and ESD
Protection
SOD-323
Package
RoHS
Compliant
SOD-323
■
■
Applications
■
■
■
-
+
High Speed Switching
Circuit Protection
Voltage Clamping
Schematic Diagram
Maximum Ratings
(T =25°C
unless
otherwise specified)
A
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
Forward Continuous Current
Peak Forward Surge Current @t<1.0s
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
P
D
R
θJA
T
J
T
STG
Value
Unit
70
70
100
200
500
125
-55
to
+150
V
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics
(T =25°C unless otherwise specified)
A
Parameter
Forward Voltage
Reverse Current
Capacitance Between Terminals
Reverse Recovery Time
Symbol
V
F1
V
F2
I
R
C
T
t
rr
Min
Typ
Max
0.41
1
100
2
5
Unit
V
V
nA
pF
ns
Conditions
I
F
=1mA
I
F
=15mA
V
R
=50V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
1/3
BAS70WS
Schottky Barrier Diode
Typical Characteristic Curves
Forward
20
Characteristics
100
Reverse
Pulsed
Characteristics
Pulsed
10
10
(mA)
=2
5
℃
(uA)
=1
00
℃
T
a
=100
℃
1
T
I
F
1
REVERSE CURRENT I
R
3
FORWARD CURRENT
T
a
a
0.1
T
a
=25
℃
0.01
0.3
0.1
0.0
1E-3
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
30
35
40
FORWARD VOLTAGE
V
F
(V)
REVERSE VOLTAGE
V
R
(V)
2.8
Capacitance Characteristics
T
a
=25
℃
f=1MHz
250
Power Derating Curve
2.4
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
2.0
P
D
150
1.2
POWER DISSIPATION
0
5
10
15
20
1.6
(mW)
200
100
0.8
50
0.4
0.0
0
0
25
50
75
100
125
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2/3