LITE-ON
SEMICONDUCTOR
SBG2030CT thru 2045CT
REVERSE VOLTAGE
- 30
to
45
Volts
FORWARD CURRENT
- 20
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
D
2
PAK
K
A
K
I
D
B
F
C
1
K
2
DIM.
A
B
C
D
E
F
D
2
PAK
MIN.
9.65
14.60
8.25
1.14
0.51
2.29
2.29
MAX.
10.69
15.88
9.25
1.40
1.14
2.79
2.79
MECHANICAL DATA
Case : D PAK molded plastic
2
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
PIN 1
PIN 2
G
E
J
H
K
HEATSINK
2.92
2.03
1.14
1.40
I
J
0.30
0.64
K
4.37
4.83
All Dimensions in millimeter
G
H
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
SYMBOL
SBG2030CT
30
21
30
SBG2035CT
35
24.5
35
20
225
SBG2040CT
40
28
40
SBG2045CT
45
31.5
45
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
C
=
105 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Forward Voltage
at 10A DC (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
I
FSM
V
F
A
0.55
1.0
50
350
2.0
-55 to +125
-55 to +150
V
mA
pF
C/W
@T
J
=25 C
@T
J
=100 C
I
R
C
J
R
0JC
T
J
T
STG
C
C
REV. 2, 01-Dec-2000, KTHB08
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Typical Thermal Resistance Junction to Case.
RATING AND CHARACTERISTIC CURVES
SBG2030CT thru SBG2045CT
AVERAGE FORWARD CURRENT
AMPERES
30
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
50
0
1
2
5
10
20
50
100
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
20
10
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
100
T
J
= 100 C
10
T
J
= 25 C
10
T
J
= 75 C
1.0
1.0
0.1
T
J
= 25 C
PULSE WIDTH 300us
2% Duty Cycle
0.01
0
20
40
60
80
100
120
140
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
T
J
= 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 2, 01-Dec-2000, KTHB08
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
