XOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, CDIP14
参数名称 | 属性值 |
厂商名称 | Harris |
包装说明 | , |
Reach Compliance Code | unknown |
Is Samacsys | N |
其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY |
系列 | HC/UH |
JESD-30 代码 | R-CDIP-T14 |
JESD-609代码 | e4 |
负载电容(CL) | 50 pF |
逻辑集成电路类型 | XOR GATE |
功能数量 | 4 |
输入次数 | 2 |
端子数量 | 14 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
传播延迟(tpd) | 20 ns |
认证状态 | Not Qualified |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | GOLD |
端子形式 | THROUGH-HOLE |
端子位置 | DUAL |
总剂量 | 100k Rad(Si) V |
Base Number Matches | 1 |
5962R9578301VCC | 5962R9578301VXX | 5962R9578301VXC | 5962R9578301VCX | HCS86DMSH | HCS86KMSH | |
---|---|---|---|---|---|---|
描述 | XOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, CDIP14 | XOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, CDFP14 | XOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, CDFP14 | XOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, CDIP14 | XOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, CDIP14 | XOR Gate, HC/UH Series, 4-Func, 2-Input, CMOS, CDFP14 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY |
系列 | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH |
JESD-30 代码 | R-CDIP-T14 | R-CDFP-F14 | R-CDFP-F14 | R-CDIP-T14 | R-CDIP-T14 | R-CDFP-F14 |
逻辑集成电路类型 | XOR GATE | XOR GATE | XOR GATE | XOR GATE | XOR GATE | XOR GATE |
功能数量 | 4 | 4 | 4 | 4 | 4 | 4 |
输入次数 | 2 | 2 | 2 | 2 | 2 | 2 |
端子数量 | 14 | 14 | 14 | 14 | 14 | 14 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | FLATPACK | FLATPACK | IN-LINE | IN-LINE | FLATPACK |
传播延迟(tpd) | 20 ns | 20 ns | 20 ns | 20 ns | 25 ns | 25 ns |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | YES | YES | NO | NO | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | THROUGH-HOLE | FLAT | FLAT | THROUGH-HOLE | THROUGH-HOLE | FLAT |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |
JESD-609代码 | e4 | - | e4 | - | e0 | e0 |
负载电容(CL) | 50 pF | - | 50 pF | - | 50 pF | 50 pF |
端子面层 | GOLD | - | GOLD | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Base Number Matches | 1 | 1 | 1 | 1 | - | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved