DATA SHEET
GQZ2.0~GQZ56
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.0 to 56 Volts
POWER
500 mWatts
QUADRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
67
.0
(1
.7
• Ideally Suited for Automated Assembly Processes
)
MECHANICAL DATA
• Case: Molded Glass QUADRO-MEIF
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.03 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.020(0.5)
.012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
STAD-JAN.27.2004
.063(1.6)
.055(1.4)DIA.
PAGE . 1
RATING AND CHARACTERISTIC CURVES
POWER DISSIPATION, mWatts
500
400
300
200
100
0
50
100
150
200
O
250
AMBIENT TEMPERATURE, C
FIG. 1 POWER DERATING CURVE
Vz (V)
Iz (mA)
50
40
30
20
10
0
5
10
15
20
25
30
Test Current
Iz = 20mA
12
11
15
9.1
6.8
6.2
5.6
5.1
4.7
4.3
20
24
3.9
2.7
Fig.2 BREAKDOWN CHARACTERISTICS
STAD-JAN.27.2004
PAGE . 4
NXP MCU
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