DATA SHEET
1N5221B~1N5267B
SILICON ZENER DIODES
VOLTAGE
2.4 to 75 Volts
POWER
500 mWatts
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
•
Lead free in comply with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 15" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
P ar m et r
a
e
P ow erD i si aton atTam b = 25
s p i
Juncton Tem per t r
i
aue
S t r ge Tem per t r R ange
oa
aue
Vald pr vi ed t atl ads ata di t nce of8m m fom case ar keptatam bi ntt m per t r .
i o d
h e
sa
r
e
e e
aue
O
S ym bol
Val e
u
500
175
- 5 t +175
6 o
U nis
t
mW
O
C
P
TO T
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at I
F
= 200mA
Symbol
Mi n.
--
--
Typ.
Max.
0.3*
1.1
Uni ts
K/mW
V
R
θ
JA
V
F
--
--
Vali d provi ded that leads at a di stance of 10 mm from case are kept at ambi ent temperature.
STAD-NOV.08.2006
PAGE . 1
N ominal Zener Voltage
Part N umber
No m. V
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
V
Z
@ I
ZT
M i n. V
2.28
2.38
2.57
2.66
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.7
5.89
6.46
7.13
7.79
8.27
8.65
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
44.65
48.45
53.2
57
58.9
64.6
71.25
M a x. V
2.52
2.63
2.84
2.94
3.15
3.47
3.78
4.1
4.52
4.94
5.36
5.88
6.3
6.51
7.14
7.88
8.61
9.14
9.56
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
49.35
53.55
58.8
63
65.1
71.4
78.75
Max. Zener Impedance
Z
ZT
@ I
ZT
Ω
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
150
125
150
170
185
230
270
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7
Z
ZK
@ I
ZK
Ω
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Max R everse
Leakage C urrent
I
R
@ V
R
uA
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
M a ki g
r n
c de
o
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
STANDARD VOLTAGE TOLERANCE IS + 5% AND:
SUFFIX “A” FOR + 3%
SUFFIX “B” FOR + 5%
SUFFIX “C” FOR + 10%
SUFFIX “D” FOR + 20%
* MEASURED WITH PULSES Tp=40 mSec.
STAD-NOV.08.2006
ZENERDIODENUMBERINGSYSTEM:
1N5225B
B
1*
2*
1* TYPE NO.
2* TOLERANCE OF VZ
3* e.g., 1N5225B=3.0V + 5%
PAGE . 2
RATING AND CHARACTERISTIC CURVES
POWER DISSIPATION, mWatts
500
400
300
200
100
0
50
100
150
200
O
250
AMBIENT TEMPERATURE, C
FIG. 1 POWER DERATING CURVE
Vz (V)
5
10
15
20
25
30
Iz (mA)
50
40
30
20
10
Test Current
Iz = 20mA
0
15
12
11
9.1
20
6.8
6.2
5.6
5.1
4.7
4.3
24
3.9
2.7
Fig.2 BREAKDOWN CHARACTERISTICS
STAD-NOV.08.2006
PAGE . 3
Microchip MCU
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