DATA SHEET
W005M~W10M
1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE
VOLTAGE
FEATURES
• High surge dielectric strength.
• Typical I
R
LESS Than 1uA.
• Exceeds environmental standards of MIL-STD-19500
• Ideal for printed circuit board.
1.2(30.5)MIN
1.0(25.4)MIN
.217(5.5)
.197(5.0)
50 to 1000 Volts
CURRENT
1.0 Amperes
AM
Unit: inch (mm)
• Plastic material used carries Underwriters Laboratory recognition.
.370(9.4)
.339(8.6)
• High temperature soldering guaranteed: 265
O
C/10 seconds/ .375”
(9.5 mm) lead length/5 Ibs. (2.3kg) tension
• Pb free product are available : 99% Sn can meet RoHS environment
substance directive request
Case: Reliable low cost construction utilizing molded plastic technique
Terminals: Leads solderable per MIL-STE-750, Method 2026
Mounting Position: Any
Weight: 0.04 ounces, 1.1 grams.
Bottom View
.220
(5.6)
.181
(4.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, Single phase, half wave, 60Hz.
For Capacitive load derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current .375"
(9.5mm ) Lead Length at T
A
=25
O
C
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I
2
t Rating for fusing ( t<8.35ms)
Maximum Forward Voltage Drop per Element at 1.0A
Maximum DC Reverse Current T
A
=25
O
C
at Rated DC Blocking Voltage T
A
=100
O
C
Typical Junction capacitance per bridge element (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
AV
I
FSM
I
2
t
V
F
I
R
C
J
T
J
T
STG
W005M
50
35
50
W01M
100
70
100
W02M
200
140
200
W04M
400
280
400
1.0
50.0
5.0
1.0
10.0
1000
24
-55 to + 125
-55 to + 150
W06M
600
420
600
W08M
800
560
800
W10M
1000
700
1000
UNITS
V
V
V
A
A
A
2
s
V
µA
pF
O
.220
(5
.181 .6)
(4.6
)
MECHANICALDATA
.031(0.8)
.028(0.7)
C
C
O
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
STAD-NOV.06.2003
PAGE . 1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1.6
80
60
40
30
20
10
0
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
T
J
=25 C
8.3ms SINGLE HALF SINE WAVE
JEDED METHOD
O
BRIDGE OUTPUT
FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
Resistive of
Inductive Load
Capactivie Load 50
O
Corduction Angle
20
40
60
80
100
120
140
AMBIENT TEMPERATURE,
O
C
Fig.1 DERATING CURVE OUTPUT RECTIFIED CURRENT
20
10
Fig.2MAXIMUM NON-REPETITIVE PEAK FORWARD CURRENT
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
INSTANTANEOUS REVERSE CURRENT, uA
T
A
=100
O
C
1.0
1.0
0.1
0.1
T
J
=25
O
C
Pulse Width =300us
1% Duty Cycle
0.01
0.4
T
A
=25
O
C
0.01
1
20
40
60
80
100
120
160
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig.3 TYPICAL FORWARD CHARACTERISTIC
Fig.4 TYPICAL REVERSE CHARACTERISTICS
100
60
CAPACITANCE, pF
40
20
10
6
4
2
1
.1
.2
.4
1
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
Fig.5 TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
STAD-NOV.06.2003
PAGE . 2
详细参数
全文预览
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
