DATA SHEET
SB820CT~SB8150CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-
S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Both normal and Pb free product are available :
Pb free: 99% Sn above
.50(12.7)MIN
.419(10.66)
.387(9.85)
.139(3.55)
MIN
20 to 150 Volts
CURRENT
8 Amperes
TO-220AB
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
Normal : 80~95% Sn, 5~20% Pb
.038(0.96)
.019(0.50)
.177(4.5)MAX
.548(13.93)
.025(0.65)MAX
MECHANICALDATA
Case: TO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
.1(2.54)
.1(2.54)
AC
Positive CT
AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T c = 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 4 . 0 A
M a x i m u m D C R e v e r s e C u r r e n t TA = 2 5
O
C
a t R a t e d D C B l o c k i n g V o l t a g e TA = 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g
S t o r a g e Te m p e r a t u r e R a n g
S YM B OL S B 8 2 0 C T S B 8 3 0 C T S B 8 4 0 C T S B 8 5 0 C T S B 8 6 0 C T S B 8 8 0 C T S B 8 1 0 0 C T S B 8 1 5 0 C T U N IT S
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
0 .5 5
20
14
20
30
21
30
40
28
40
50
35
50
8
150
0 .7 5
0 .5
50
6
-5 0 to +1 2 5
-5 0 to +1 5 0
O
60
42
60
80
56
80
100
70
100
150
105
150
V
V
V
A
A
0 .8 5
0.92
V
I
R
mA
RθJ C
T
J
T
J
, T
S TG
C / W
O
C
C
O
Note.
Both Bonding and Chip structure are available.
STAD-FEB.21.2005
PAGE . 1
RATING AND CHARACTERISTIC CURVES
150
AVERAGE FORWARD CURRENT
AMPERES
10
8
6
4
2
0
0
50
100
O
PEAK FORWARD SURGE CURRENT
AMPERES
120
110
90
70
50
30
20
10
1
2
5
10
8.3ms Single
Half Since-Wave
JEDEC Method
150
CASE TEMPERATURE, C
20
50
100
NO. OF CYCLE AT 60HZ
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
2
40
10
1
V
RRM
=20-40V
V
RRM
=50-60V
V
RRM
=80-100V
T
J
=100
O
C
INSTANTANEOUS FORWARD CURRENT
AMPERES
20V~40V
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
.3
.4
.5
.6
.7
50V~60V
REVERSE CURRENT, mA
10
0
80V~100V
10
-1
10
-2
T
J
=
25
C
O
10
-3
10
-4
20
40
60
80
100
120
.8
.9
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
STAD-FEB.21.2005
PAGE . 2
Microchip MCU
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