DATA SHEET
MMBT3906W
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.004(.10)MIN.
.087(2.2)
.078(2.0)
40 Volts
POWER
150
mWatts
SOT-323
Unit: inch (mm)
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.0052 gram
Marking: S2A
Top View
3
Collector
1
BASE
3
COLLECTOR
.056(1.40)
.047(1.20)
.006(.15)
.002(.05)
.004(.10)MAX.
.016(.40)
.078(.20)
1
Base
2
Emitter
2
EMITTER
ABSOLUTE RATINGS
PA R A M E TE R
C ol ct r-E m it rVolage
l o
e
te
t
C ol ct r-B ase Volage
l o
e
t
E m it r-B ase Volage
te
t
C ol ct rC urent-C ontnuous
l o
e
r
i
S ym bol
V
C EO
V
C BO
V
EBO
I
C
Val e
u
-0
4
-0
4
-5.0
- 00
2
U nis
t
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
Rθ
JA
T
J
TI
STG
Value
150
833
-55 to 150
-55 to 150
Units
mW
O
.044(1.1)
.035(0.9)
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUL.06.2004
PAGE . 1
ELECTRICAL CHARACTERISTICS
P A R A M E TE R
C o le ct r - E m i t r B re a kd o w n V o l a g e
l o
te
t
C o le ct r - B a se B re a kd o w n V o l a g e
l o
t
E m i t r - B a se B re a kd o w n V o l a g e
te
t
B a se C ut f C urre nt
o f
C o le ct r C ut f C urre nt
l o
o f
S ym b o l
V
(B R )
C E O
V
(B R )
C B O
V
(B R )
E B O
I
L
B
I
EX
C
Te st C o nd i i n
to
I = -1 . m A , I = 0
C
0
B
I = -1 0 uA , I = 0
C
E
I = -1 0 uA , I = 0
E
C
V
C E
= -3 0 V , V
E B
= -3 . V
0
V
C E
= -3 0 V , V
E B
= -3 . V
0
I = -0 . m A , V
C E
= -1 . V
C
1
0
I = -1 . m A , V
C E
= -1 . V
C
0
0
C
0
I = -1 0 m A , V
C E
= -1 . V
I = -5 0 m A , V
C E
= -1 . V
C
0
C
0
I = -1 0 0 m A , V
C E
= -1 . V
I = -1 0 m A , I = -1 . m A
C
B
0
I = -5 0 m A , I = -5 . m A
C
B
0
I = -1 0 m A , I = -1 . m A
C
B
0
C
B
0
I = -5 0 m A , I = -5 . m A
V
C B
= -5 V , I = 0 , f 1 M H z
E
=
V
C B
= -0 . V , I = 0 , f 1 M H z
5
C
=
V
C C
= -3 V ,
B E
= -0 . V ,
V
5
C
I
0
I = -1 0 m A ,
B
= -1 . m A
V
C C
= -3 V ,
B E
= -0 . V ,
V
5
I = -1 0 m A ,
B
= -1 . m A
C
I
0
V
C C
= -3 V ,
C
= -1 0 m A
I
B
B
0
I 1 = I 2 = -1 . m A
V
C C
= -3 V ,
C
= -1 0 m A
I
I 1 = I 2 = -1 . m A
B
B
0
MI .
N
-4 0
-4 0
-5 .
0
-
-
60
80
100
60
30
-
-0 . 5
6
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
M AX.
-
-
-
-5 0
-5 0
-
-
300
-
-
-0 . 5
2
-0 .
4
-0 . 5
8
-0 . 5
9
4.
5
10
35
35
225
75
U ni s
t
V
V
V
nA
nA
D C C urre nt G a i (N o t 2 )
n
e
h
F E
-
C o le ct r - E m i t r S a t ra t o n V o l a g e
l o
te
u i
t
(N o t 2 )
e
B a se - E m i t r S a t ra t o n V o l a g e
te
u i
t
(N o t 2 )
e
C o le ct r - B a se C a p a ci a nce
l o
t
E m i t r - B a se C a p a ci a nce
te
t
D e l y Ti e
a
m
R i e Ti e
s
m
S t ra g e Ti e
o
m
F a l Ti e
l m
V
C E (S A T)
V
B E (S A T)
C
CBO
C
EBO
t
d
t
r
t
s
t
f
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3V
27 5
Ω
< 1ns
0
0 .5V
10K
Ω
C
S
* < 4pF
1N916
-1 0.9 V
30 0 n s
D u ty C yc le ~ 2 .0%
D e la y a n d R is e T im e E q u iv a le n t T e s t C irc u it
3V
275Ω
275
< 1ns
+9.1V
10KΩ
10K
C
S
* < 4pF
C
S
* < 4pF
1N916
0
-10.9V
10 to 500us
Duty Cycle ~ 2.0%
Storage and Fall Time Equivalent Test Circuit
STAD-JUL.06.2004
PAGE . 2
ELECTRICAL CHARACTERISTICS CURVE
300
T
J
= 150˚ C
250
1.0
1.2
V
CE
= 1V
200
T
J
= 100˚ C
-V
BE
(V)
0.8
T
J
= 25˚ C
0.6
T
J
= 100˚ C
0.4
T
J
= 150˚ C
hFE
150
T
J
= 25˚ C
100
50
V
CE
= 1V
0
0.01
0.2
0.1
1
10
100
1000
0.0
0.01
0.1
1
10
100
1000
Collector Current, -I
C
(mA)
Fig. 1. Typical h
FE
vs. Collector Current
1.00
I
C
/I
B
= 10
Fig. 2. Typical V
BE
vs. Collector Current
1.000
T
J
= 25˚ C
Collector Current, -I
C
(mA)
T
J
= 100˚
-VCE(sat) (V)
0.10
T
J
= 150˚
T
J
= 25˚
-VBE(sat) (V
T
J
= 150˚ C
I
C
/I
B
= 10
0.01
0.01
0.1
1
10
100
1000
0.100
0.01
0.1
1
10
100
Collector Current, -I
C
(mA)
Fig. 3. Typical V
CE (sat)
vs. Collector Current
10
Fig. 4. Typical V
BE (sat)
vs. Collector Current
Collector Current, -I
C
(mA)
C
IB
(EB)
Capacitance (pF)
C
OB
(CB)
1
-0.1
-1
Reverse Voltage, V
-10
R
-100
(V)
Fig. 5. Typical Capacitances vs. Reverse Voltage
STAD-JUL.06.2004
PAGE . 3
MOUNTING PAD LAYOUT
SOT-323
Unit: inch (mm)
0.035(0.9)
0.025(0.65)
0.028(0.7)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUL.06.2004
0.075(1.9)
PAGE . 4
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