DATA SHEET
MMBT2222AW
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
40 Volts
POWER
150 mWatts
SOT-323
Unit: inch (mm)
• Collector current IC = 600mA
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.056(1.40)
.047(1.20)
.006(.15)
.002(.05)
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.0052 gram
Marking: M2A
Top View
3
Collector
1
BASE
3
COLLECTOR
.016(.40)
.078(.20)
.004(.10)MAX.
1
Base
2
Emitter
2
EMITTER
ABSOLUTE RATINGS
PA R A M E TE R
C ol ct r-E m it rVolage
l o
e
te
t
C ol ct r-B ase Volage
l o
e
t
E m it r-B ase Volage
te
t
C ol ct rC urent-C ontnuous
l o
e
r
i
S ym bol
V
C EO
V
C BO
V
EBO
I
C
Val e
u
40
75
6.
0
600
U nis
t
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
Rθ
JA
T
J
TI
STG
Value
150
833
-55 to 150
-55 to 150
Units
mW
O
.044(1.1)
.035(0.9)
.087(2.2)
.078(2.0)
• Collector-emitter voltage VCE = 40V
.004(.10)MIN.
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUL.06.2004
PAGE . 1
ELECTRICAL CHARACTERISTICS
P A R A M E TE R
C o le ct r - E m i t r B re a kd o w n V o l a g e
l o
te
t
C o le ct r - B a se B re a kd o w n V o l a g e
l o
t
E m i t r - B a se B re a kd o w n V o l a g e
te
t
B a se C ut f C urre nt
o f
S ym b o l
V
(B R )
C E O
V
(B R )
C B O
V
(B R )
E B O
I
L
B
C
I
EX
Te st C o nd i i n
to
I =1. m A , I =0
C
0
B
I = 1 0 uA , I = 0
C
E
I = 1 0 uA , I = 0
E
C
V
C E
=60V , V
E B
=3. V
0
V
C E
=60V , V
E B
=3. V
0
V
C E
=60V , I =0,
E
V
C E
= 6 0 V , I = 0 ,
J
= 1 2 5
O
C
E
T
V
E B
=3. V , I =0,
0
C
I =0. m A , V
C E
=10V
C
1
I =1. m A , V
C E
=10V
C
0
I =10m A , V
C E
=10V
C
C
T
I = 1 0 m A , V
C E
= 1 0 V ,
J
= 1 2 5
O
C
I = 1 5 0 m A , V
C E
= 1 0 V (N o t 2 )
C
e
I = 1 5 0 m A , V
C E
= 1 V (N o t 2 )
C
e
I = 5 0 0 m A , V
C E
= 1 0 V (N o t 2 )
C
e
I =150m A , I =15m A
C
B
I =500m A , I =50m A
C
B
I =150m A , I =15m A
C
B
I =500m A , I =50m A
C
B
V
C B
=10V , I =0, f 1M H z
E
=
V
C B
=0. V , I =0, f 1M H z
5
C
=
V
C C
= 3 V ,
B E
= -5 V ,
V
I =150m A ,
B
=15m A
C
I
V
C C
= 3 V ,
B E
= -5 V ,
V
I =150m A ,
B
=15m A
C
I
V
C C
=30V ,
C
=150m A
I
I 1=I 2=15m A
B
B
V
C C
=30V ,
C
=150m A
I
I 1=I 2=15m A
B
B
MI .
N
40
75
6.
0
-
-
-
-
35
50
75
35
100
50
40
-
0.
6
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
M AX.
-
-
-
20
10
10
10
100
-
-
-
-
300
-
-
0.
3
1.
0
1.
2
2.
0
8.
0
25
10
25
225
60
U ni s
t
V
V
V
nA
nA
nA
uA
nA
C o le ct r C ut f C urre nt
l o
o f
I
BO
C
E m i t r C ut f C urre nt
te
o f
I
BO
E
D C C urre nt G a i
n
h
F E
-
C o le ct r - E m i t r S a t ra t o n V o l a g e
l o
te
u i
t
(N o t 2 )
e
B a se - E m i t r S a t ra t o n V o l a g e
te
u i
t
(N o t 2 )
e
C o le ct r - B a se C a p a ci a nce
l o
t
E m i t r - B a se C a p a ci a nce
te
t
D e l y Ti e
a
m
R i e Ti e
s
m
S t ra g e Ti e
o
m
F a l Ti e
l m
V
C E (S A T)
V
B E (S A T)
C
CBO
C
EBO
t
d
t
r
t
s
t
f
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30V
+30V
+16V
0
-2V
< 2ns
1.0 to 100us
Duty Cycle ~ 2.0%
200Ω
+16V
0
1.0 to 100us
Duty Cycle ~ 2.0%
200Ω
1KΩ
C
S
* < 10pF
-14V
< 20ns
1KΩ
1N914
-4V
C
S
* < 10pF
Scope rise time < 4ns
Fig. 1.
Turn-On Time
* Total shunt capacitance of test jig, connectors, and oscilloscope
Fig. 2.
Turn-Off Time
STAD-JUL.06.2004
PAGE . 2
ELECTRICAL CHARACTERISTICS CURVE
350
300
250
T
J
= 100˚ C
200
T
J
= 150˚ C
0.8
0.7
0.6
0.5
T
J
= 100˚ C
T
J
= 150˚ C
T
J
= 25˚ C
V
BE
(on)
h
FE
150
100
50
0
0.1
1
V
CE
= 10V
T
J
= 25˚ C
0.4
0.3
0.2
V
CE
= 10V
0.1
0.0
10
100
1000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical h
FE
vs Collector Current
500
450
400
350
I
C
/I
B
= 10
T
J
= 150 ˚C
Fig. 4. Typical V
BE
vs Collector Current
1.2
I
C
/I
B
= 10
1.0
V
CE
(sat) (mV)
0.8
300
250
200
150
100
V
BE
(sat) (V)
T
J
= 25 ˚C
0.6
T
J
= 150 ˚C
0.4
0.2
50
0
0.1
1
10
100
1000
Collector Current, I
C
(mA)
T
J
= 25 ˚C
T
J
= 100 ˚C
0.0
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Fig. 5. Typical V
CE
(sat) vs Collector Current
100
Fig. 6. Typical V
BE
(sat) vs Collector Current
f=1 MHz
Capacitance (pF)
C
IB
(EB)
10
C
OB
(CB)
1
0.1
1
10
100
Reverse Voltage, V
R
(V)
Fig. 7. Typical Capacitances vs Reverse Voltage
STAD-JUL.06.2004
PAGE . 3
MOUNTING PAD LAYOUT
SOT-323
Unit: inch (mm)
0.035(0.9)
0.025(0.65)
0.028(0.7)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUL.06.2004
0.075(1.9)
PAGE . 4
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