MMBFJ309 / MMBFJ310
J-FET HIGH FREQUENCY
AMPLIFIER TRANSISTOR
N-CHANNEL
For VHF/UHF Applications
3
G
S
1
D
2
1
2
3
DEVICE MARKING
MMBFJ309 = B9J; MMBFJ310 = B1J
SOT-23
Note: Drain and Source are
interchangeable.
ELECTRICAL RATINGS
Rating
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Symbol
V
DS
V
GS
I
G
Value
25
25
10
Units
V
V
mAdc
THERMAL RATINGS
Rating
Power Dissipation (Note 1)
Thermal Resistance - Junction to Ambient (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
P
d
R
JA
TJ
T
stg
Value
225
556
-55 to +150
-55 to +150
Units
mW
°C/W
°C
°C
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
9/19/2005
Page
1
www.panjit.com
MMBFJ309 / MMBFJ310
ELECTRICAL CHARACTERISTICS
(TJ = 25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Gate-Source Breakdown Voltage
Gate Reverse Current
Symbol
V
(BR)GSS
I
GSS
Conditions
I
G
= -1.0 µA, V
DS
= 0
V
GS
= -15Vdc
V
GS
= -15Vdc T =125°C
J
V
DS
= 10Vdc
I
DS
= 1.0nAdc
Min
-25
-
-
-1.0
-2.0
Typical
-
-
-
-
-
Max
-
-1.0
-1.0
-4.0
-6.5
Units
V
nA
µA
V
V
Gate-Source Cutoff Voltage
MMBFJ309
MMBFJ310
V
GS (off)
ON CHARACTERISTICS
Parameter
Zero Gate Current Drain Current
Symbol
Conditions
V
DS
= 10Vdc
V
GS
= 0Vdc
I
G
= 1.0 mA, V
DS
= 0
Min
12
24
-
Typical
-
-
-
Max
30
60
1.0
Units
mA
mA
V
MMBFJ309
MMBFJ310
Gate-Source Forward Voltage
I
DSS
V
GS(f)
SMALL-SIGNAL CHARACTERISTICS
Parameter
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Equivalent Short-Circuit Input Noise
Voltage
Symbol
Y
fs
y
os
C
iss
C
rss
Conditions
I
D
= 10 mA, V
DS
= 10 V
f = 1.0 kHz
I
D
= 10 mA, V
DS
= 10 V
f = 1.0 kHz
V
GS
= -10V, V
DS
= 0V
f = 1.0 MHz
V
GS
= -10V, V
DS
= 0V
f = 1.0 MHz
I
D
= 10 mA, V
DS
= 10 V
f = 100 Hz
Min
8.0
-
-
-
-
Typical
-
-
-
-
10
Max
18
250
5.0
2.5
-
Units
mmhos
µmhos
pF
pF
e
n
nV / Hz
9/19/2005
Page 2
www.panjit.com
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